Nanopatterning and Nanomachining with Table-Top Extreme Ultraviolet Lasers
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0961-O06-05
Nanopatterning and Nanomachining with Table-Top Extreme Ultraviolet Lasers Mario Carlos Marconi1,2, Przemyslaw Wojciech Wachulak1,2, Maria Gabriela Capeluto3, Georgyi Vaschenko1,2, Herman Bravo1,2, Carmen S. Menoni1,2, Jorge Rocca1,2, Erik H. Anderson4, Weilun Chao4, David Attwood4,5, Oscar Hemberg6, Bradley Frazer6, and Scott Bloom6 1 Electrical and Computer Engineering, Colorado State University, 1373 Campus Delivery, Fort Collins, CO, 80523 2 NSF Engineering Research Center for Extreme Ultraviolet Science and Technology, Fort Collins, CO, 80523 3 Departamento de Fisica, Universidad de Buenos Aires, Facultad de Ciencias Exactas, Ciudad Universitaria-Pabellon 1, Buenos Aires, C1428EHA, Argentina 4 Lawrence Berkeley National Laboratory, Berkeley, CA, 94720 5 University of California at Berkeley, Berkeley, CA, 94720 6 JMAR Technologies Inc., San Diego, CA, 92127
ABSTRACT Patterning of photo-resist was accomplished using a table top extreme ultraviolet (EUV) laser and an interferometric lithography set up. The high and controllable degree of coherence output of the recently developed EUV laser in Colorado State University was exploited in a Lloyd’s mirror IL setup to pattern lines and arrays of nano-dots with period smaller than 100 nm in a polymethil metacrylate (PMMA) coated Si wafer. Multiple exposure in the same sample added versatility to the patterning method allowing different motifs. Also, using the high peak power of the EUV laser, ablation of sub-100 nm holes in PMMA was also demonstrated. The smallest diameter ablated holes, 82 nm, were obtained by placing the sample at the third order focus of a Fresnell zone plate (FZP) lens. These results demonstrate the feasibility of sub-100 nm patterning of materials with a focused EUV laser beams, opening a path for the development of new nanoprobes and nanomachining tools. INTRODUCTION Advances in nano-scale patterning and machining will impact many nano-technology applications by providing access to the fabrication of complex two-dimensional templates that could be used as scaffolds to grow nanostructures and to fabricate nano-scale devices. One widely used technique to pattern periodic nanometer structures is a particular type of photolithography called interferometric lithography (IL). The IL technique uses the coherence properties of the light source to generate organized patterns of high and low intensity in the form of lines or spots. These selected regular intensity patterns obtained by the coherent superposition of two or more beams, can activate a photosensitive material and produce periodic structures of size proportional to the wavelength over large areas with relatively simple setups. State-of-theart nano-patterning tools based on the IL technique presently use ultraviolet lasers or synchrotron light [1-7]. Using 13 nm synchrotron light with an IL set up, the world record for small dense lines, 19 nm, was achieved [8]. Other interference motifs such as arrays of nanometer diameter
circles in square and hexagonal matrixes, or circular and
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