Nitride Wide Bandgap Semiconductor Material and Electronic Devices by Yue Hao, Jin-Feng Zhang, and Jin-Cheng Zhang
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correlated systems. Graphene, carbon nanotubes, and fullerenes are discussed with beautiful schematics. The electronic properties and band structure of graphene, as well as the effects of magnetic field on their structure and the quantum Hall effect, are treated with quantum approaches. This is an outstanding book covering fundamental concepts and advanced theories explaining classical and quantum phenomena in solids. Solving the homework problems given at the end of each
Nitride Wide Bandgap Semiconductor Material and Electronic Devices Yue Hao, Jin-Feng Zhang, and Jin-Cheng Zhang CRC Press, 2016 368 pages, $219.95 (e-book $153.97) ISBN 9781315368856
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his book illustrates how incredibly far the technology of gallium nitridebased electronic devices has progressed in the past 25 years. Gallium nitride transistors are commercially available and are preferred over their silicon counterparts for high-frequency and high-power electronics. This volume emphasizes transistors. Optoelectronic devices, such as lightemitting diodes and laser diodes, are not covered. Chapter 1 gives an overview of the applications of gallium nitride-based devices. Chapters 2–7 discuss specific electrical properties of the nitrides, the standard procedures (atomic force microscopy, x-ray diffraction) for characterizing their structural properties, and the growth methods that have been optimized to produce high-quality thin films. Chapter 4 explains the underlying physics responsible for forming a two-dimensional electron gas at a heterojunction. The growth of specific heterostructures is covered in chapters 5 (AlGaN/GaN) and 7 (InAlN/GaN). Chapter 8 describes crystalline defects and residual impurities, which are important in GaN-based devices because they are unavoidable with the current technology.
This includes methods for their identification and how they vary with different process conditions, as, for example, the tendency for nitrogen polarity materials to more readily incorporate oxygen than gallium polar GaN. Chapter 9 covers the principles and performance of the most widely employed GaN-based transistor: the high-electron-mobility transistor (HEMT). Chapter 10 covers the steps for fabricating HEMTs, including etching, metal contact formation, and surface passivation. High temperatures and high electrical fields can deteriorate the performance of GaN HEMTs; chapter 11 reports on the fundamental causes and their remedies. GaN HEMTs are most frequently on devices, but enhancement mode devices have been developed, and their structures and operations are delineated in chapter 12. To reduce leakage currents, insulating layers have been added under the gate to create GaN metal oxide semiconductor (MOS) HEMTs, covered in chapter 13. Chapter 14 discusses areas likely to see further research and advances, including the use of nitrogen polar materials (advantageous for lower contact resistances and higher operating frequencies), Al-rich
chapter will provide students with an indepth understanding of the concepts. This is an advanced-level bo
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