Novel approach to simulation of group-III nitrides growth by MOVPE
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Novel approach to simulation of group-III nitrides growth by MOVPE S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev and Yu. N. Makarov MRS Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 01 / January 1999 DOI: 10.1557/S1092578300000600, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300000600 How to cite this article: S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev and Yu. N. Makarov (1999). Novel approach to simulation of group-III nitrides growth by MOVPE . MRS Internet Journal of Nitride Semiconductor Research, 4, pp e4 doi:10.1557/S1092578300000600 Request Permissions : Click here
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MRS
Internet Journal Nitride Semiconductor Research
Novel approach to simulation of group-III nitrides growth by MOVPE S. Yu. Karpov1, V. G. Prokofyev1, E. V. Yakovlev1, R. A. Talalaev2 and Yu. N. Makarov3 1Soft-Impact
Ltd (St.Petersburg, Russia), Physical-Technical Institute, 3Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg, 2Ioffe
(Received Wednesday, March 24, 1999; accepted Thursday, May 27, 1999)
Recent studies revealed specific features of chemical processes occurring on the surface of growing group-III nitrides − extremely low sticking probability of molecular nitrogen, low sticking coefficient and incomplete decomposition of ammonia frequently used as the nitrogen precursor. These features (kinetic by nature) result in the growth process going on under conditions remarkably deviated from the gas-solid heterogeneous equilibrium. In this paper we propose a novel approach to modeling of group-III nitride growth by MOVPE taking into account these features. In the model the sticking/evaporation coefficients of N2 and NH3 extracted from independent experiments are used allowing adequate description of the kinetic effects. The model is applied to analysis of growth of binary (GaN) and ternary (InGaN) compounds in a horizontal tube reactor. The growth rate and the solid phase composition are predicted theoretically and compared with available experimental data. The modeling results reveal lower ammonia decomposition ratio on the surface of the crystal as compared to thermodynamic expectations. The developed model can be used for optimization of growth process conditions.
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Introduction
Group III-nitrides are materials of great importance suitable for fabrication of green, blue and ultraviolet light emitting diodes (LED), laser diodes [1], and various electronic devices [2]. Progress in these fields are closely related to obtaining epitaxial layers and heterostructures of device quality. The growth techniques widely employed for this purposes are Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) [3] (the latter is the basic grow
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