Photo-Assisted MOVPE Growth of ZnMgS on (100) Si
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Photo-Assisted MOVPE Growth of ZnMgS on (100) Si Angel Rodriguez, Jeremy Shattuck, Xiaoguang Zhang, Peng Li, David Parent1, John Ayers and Faquir Jain University of Connecticut, Department of Electrical and Computer Science Engineering, Storrs, CT 06269-2157, U.S.A. 1 San Jose State University, Department of Electrical Engineering, San Jose, CA, U.S.A. ABSTRACT This paper presents for the first time photo-assisted Metalorganic vapor phase epitaxial (MOVPE) growth of ZnMgS on Si (100) substrates. The growth was done using dimethylzinc (DMZn), bismethylcyclo-pentadienyl-magnesium ((MeCP)2Mg), and diethylsulfhide (DES) as zinc, magnesium, and sulfur precursors. Epitaxial characterization by X-ray Photoelectron Spectroscopy (XPS), and low - angle X-ray Diffraction (XRD) results are presented. Mg solid phase incorporation is estimated to vary from 0 to 60 percent. The epitaxial nature of the ZnMgS layers has been verified using the low-angle X-ray diffraction eliminating any interference from the Si substrate. It can be shown with this technique that the change in the ZnMgS peak position changes from 27.35 degrees to 26.5 degrees with an increase in Mg incorporation, compared with a Si control sample peak at 27.4 degrees. XRD results obtained have been verified with XPS data. Chlorine doping of the ZnMgS layer was also studied. Concentrations up to 3 x 1015 cm-3 were observed in the ZnMgS layer. Results of the n (ZnMgS:Cl) – p (Si) diodes fabricated are also presented. INTRODUCTION The availability of flat panel televisions, laptop computers and many other products during the past decade has been made possible by the development of flat panel displays (FPDs). FPD technologies include electroluminescent displays (ELDs), light emitting diode arrays, plasma display panels (PDPs), liquid crystal displays (LCDs), and flat cathode ray tubes (CRTs). Their applications generally fall into two broad categories: (i) High Information Content (HIC) or high pixel count displays having 50,000 to 106 pixels per frame (both monochrome and color), and (ii) lower pixel count displays as used in calculators, clocks, and other consumer products. II-VI materials such as ZnCdSe have been used and proposed in the implementation of laser diodes emitting in the red through blue spectrum [1-3]. An application for this material system includes flat panel displays, which has the advantage of enabling the realization of transistor drivers in the silicon substrate. Another application includes higher efficiency solar cells, which are also currently under investigation [4,5]. Advantages of using wide-band gap material in solar cells include lower losses in the window region, and lower ohmic losses. In addition ZnS and Si exhibit closely matched electron affinities.
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EXPERIMENT & RESULTS A vertical, stainless steel EMCORE reactor with a rotating, resistively-heated molybdenum susceptor was used for growth. All growth runs were carried out at 250 Torr, with a susceptor rotation of 350 rpm, and 14.25 slm of palladium-diffused hydrogen as the ca
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