Novel Methods to Reduce Pattern Size and Pitch for Data Storage Using Electron Beam Writing
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0961-O01-03
Novel Methods to Reduce Pattern Size and Pitch for Data Storage Using Electron Beam Writing Zhou(Joe) Lu and A. N. Cartwright Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260
ABSTRACT Pattern size and pitch are two major factors that directly affect the ultimate capacity of a data storage unit. Electron beam lithography, because it can be used for direct writing at the nanometer scale, is a candidate for the fabrication of ultra-fine and ultra-compact patterns for the next generation of data storage media. In this paper, we present methods to reduce the pattern size and pitch written by electron beam lithography on the positive tone photo resist Poly(methylmethacrylate) (PMMA). The first method presented uses a writing dose that is much lower than the critical dose of the PMMA. However, in this technique, the distance between the adjacent writing spots (which are approximately Gaussian in spatial extent) is finely adjusted until the partially overlapping Gaussian functions form a contour with periodic dose peaks higher than the critical dose. This overlapping exposure results in a periodic exposure of the PMMA. Most importantly, this writing strategy, using the overlapping of low dose Gaussian beams, results in patterns with smaller size and pitch compared to the conventional methods that use a higher writing dose than the critical dose. To further improve the results, we use ultrasonic development in combination with cold development to greatly increase the resist contrast. The increased contrast results in smaller pattern sizes, and enables smaller pattern pitches, as well as improved pattern uniformity and reproducibility. Finally, as a demonstration of the technique using a conventional beam voltage of 15kV, we demonstrate ultra-fine and high density patterns with ~10nm linewidths and 50nm pitch, which corresponds to a storage capacity near 200 billion bits/inch2. By comparison, by using standard techniques (using a dose slightly higher than the critical dose and a normal development strategy), we can only obtain patterns with linewidths of about 20-30nm and pitch of about 100nm. INTRODUCTION High density integrated devices such as central processing units and data storage units continue to shrink in size. The fabrication of high density features have been studied in many areas using a variety of structures: high density gratings [1], high density magnetic structures[2, 3], and high density metal interconnects [4]. To increase the storage capacity, it is necessary to simultaneously achieve narrow linewidths and high packing densities in these structures. Due to the electron wavelength, electron beam lithography (EBL) is currently one of the more favorable tools to define narrow linewidth dense patterns, especially in the nano-scale range. Using positive tone Poly(methylmethacrylate) (PMMA) as the resist, patterns with ~10nm[5-7] linewidths have already been demonstrated by the EBL technique. However, dense pattern
fabrication by EBL
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