Numerical investigation of traps and optical response in III-V nitride quantum LED
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Numerical investigation of traps and optical response in III‑V nitride quantum LED M. Manikandan1 · D. Nirmal2 · J. Ajayan3 · L. Arivazhagan2 · P. Prajoon4 · G. Dhivyasri1 Received: 14 August 2020 / Accepted: 17 November 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The impact of trapping on the optical properties of Gallium Nitride (GaN) Light Emitting Diodes (LED) has been analyzed in this work. The analysis is carried out by using Technology Computer Aided Design (TCAD) physical simulator. GaN LED with four quantum Wells have been considered with donor trap density ranging from 5 × 1015 cm−3 to 1 × 1019 cm−3. Polarization, radiative recombination and Auger recombination models were used in the simulation. The TCAD simulation results indicate that luminous power and quantum efficiency of GaN LEDs decreases with increase of trap density. Keywords GaN · LED · Donor trap · Internal quantum efficiency
1 Introduction For several applications, Gallium Nitride based Light Emitting Diode (LED) is an outstanding device. The applications which includes health care, homeland security system, infrared lightning in military base and underwater communication (Kuan et al. 2018; BIS Research 2018; Yukio et al. 2018; Narukawa et al. 2010). Furthermore, by 2023, it is forecasted that LED market would reach US$ 1.16 billion. Thus, in the last few decades, a lot of advancement has been done in LED design, fabrication and modelling. The advancements are described as follows. Multiple quantum wells are implemented in LED, which increase the number of carriers in recombination process. Photonic crystal structures, surface roughing and chip design are used in order to enhance the extraction efficiency (Byeon * D. Nirmal [email protected] 1
Department of Electronics and Communication Engineering, KPR Institute of Engineering and Technology, Coimbatore, Tamilnadu, India
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Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, Tamilnadu, India
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Department of Electronics and Communication Engineering, SNS College of Technology, Coimbatore, Tamilnadu, India
4
Department of Electronics and Communication Engineering, Jyothi Engineering College, Thrissur, Kerala, India
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et al. 2007; Erchak et al. 2001; Li and Wong 2006; Schnitzer et al. 1993; Shmatov and Li 2003; Wierer et al. 2004). Electron blocking layer in GaN LED prevent the electron flow and thereby make it to recombine (Park et al. 2012). However, GaN LED has several challenges that degrades the optical power and internal quantum efficiency. The challenges are carrier leakage, increase of Aluminium concentration in AlGaN layer, thermal dissipation and defects/dislocations in the device. Among these challenges, defect is one of the serious issues in the development of III-V nitride based LEDs (Hurkx et al. 1992). The GaN material is not that much pure as Silicon and thereby it has intrinsic defects. In additio
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