III-Nitride LED Chip Fabrication Techniques

With the development of epitaxial growth technology and multi-quantum well structure, the internal quantum efficiency of ultra-high brightness LED has been greatly improved. For example, the internal quantum efficiency of the 625 nm AlGaInP-based LED can

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Jinmin Li · Junxi Wang · Xiaoyan Yi · Zhiqiang Liu · Tongbo Wei · Jianchang Yan · Bin Xue

III-Nitrides Light Emitting Diodes: Technology and Applications

Springer Series in Materials Science Volume 306

Series Editors Robert Hull, Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, Troy, NY, USA Chennupati Jagadish, Research School of Physical, Australian National University, Canberra, ACT, Australia Yoshiyuki Kawazoe, Center for Computational Materials, Tohoku University, Sendai, Japan Jamie Kruzic, School of Mechanical & Manufacturing Engineering, UNSW Sydney, Sydney, NSW, Australia Richard M. Osgood, Department of Electrical Engineering, Columbia University, New York, USA Jürgen Parisi, Universität Oldenburg, Oldenburg, Germany Udo W. Pohl, Institute of Solid State Physics, Technical University of Berlin, Berlin, Germany Tae-Yeon Seong, Department of Materials Science & Engineering, Korea University, Seoul, Korea (Republic of) Shin-ichi Uchida, Electronics and Manufacturing, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan Zhiming M. Wang, Institute of Fundamental and Frontier Sciences - Electronic, University of Electronic Science and Technology of China, Chengdu, China

The Springer Series in Materials Science covers the complete spectrum of materials research and technology, including fundamental principles, physical properties, materials theory, and design. Recognizing the increasing importance of materials science in future device technologies, the book titles in this series reflect the state-ofthe-art in understanding and controlling the structure and properties of all important classes of materials.

More information about this series at http://www.springer.com/series/856

Jinmin Li · Junxi Wang · Xiaoyan Yi · Zhiqiang Liu · Tongbo Wei · Jianchang Yan · Bin Xue

III-Nitrides Light Emitting Diodes: Technology and Applications

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ISSN 0933-033X ISSN 2196-2812 (electronic) Springer Series in Materials Science ISBN 978-981-15-7948-6 ISBN 978-981-15-7949-3 (eBook) https://doi.org/10.1007/978-981-15-7949-3 Jointly published with Science Press, Beijing, China The print edition is not for sale in China Mainland. Customers from China Mainland please order the print book from: Science Press. ISBN of the Co-Publisher’s edition: 978-7-03-065929-3 © Science Press and Springer Nature Singapore Pte Ltd. 2020 This work is subject to copyright. All rights are reserved by the Publishers, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specifi