NV-Diamond Magnetometer Using Electron Irradiation
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NV-Diamond Magnetometer Using Electron Irradiation Edwin Kim,1 Victor M. Acosta,2,3 Erik Bauch,3,4 Dmitry Budker,3,5 and Philip R. Hemmer6 1 Cypress Semiconductor, 1850 Ramtron Drive, Colorado Springs, CO 80921, USA 2 Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304, USA 3 Department of Physics, University of California, Berkeley, CA 94720-7300, USA 4 Technische Universität Berlin, Hardenbergstrasse 28, 10623 Berlin, Germany 5 Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA 6 Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843-3128, USA ABSTRACT Nitrogen-vacancy (NV) center in diamond is an emerging system for quantum-logic device and sensor applications. The key feature of the NV center is the ability of spin manipulation at room temperature. We apply a wide range of electron irradiation to generate the NV centers in nitrogen-rich diamond for creating best sensitivity. The NV0 and NV─ concentrations in electron irradiated diamond are determined from optical spectra. Additionally, electron spin resonance (ESR) has also proven to be an effective method for probing the electron spin transition between |ms=±1> and |ms=0> states of the NV centers. A study of ESR frequency shift and signal broadening and magnetometer sensitivity as a function of electron irradiation dose has been conducted. The research presented herein is a demonstration of minimum detectable magnetic field tailoring required for future-generation high-sensitivity diamond magnetometry. INTRODUCTION The nitrogen-vacancy (NV) center in diamond is a promising element for many applications including quantum information [1] and magnetic sensors [2,3] due to its optically detectable ground-state electron spin resonance. It is now widely accepted that there are six valence electrons associated with the NV– center [4,5], three from the dangling carbon bonds, two from the nitrogen, and one from a donor. As a result, the electronic ground state of the NV– center is a paramagnetic triplet state (S = 1). The best performance of magnetic sensor using ensembles of NV– centers can be achieved by either implanting nitrogen into pure diamond or by creating vacancies in nitrogen-rich diamond [6]. Since substitutional nitrogen atoms (NS) that do not form NV centers cause spin dephasing, the conversion of NS to NV should be optimized. In this paper, we demonstrate the effects of electron irradiation damage on the magnetic-sensing properties of the NV centers with high-dose electron irradiation followed by annealing [7]. ELECTRON IRRADIATION NV centers have been created by irradiating a variety of species. Koike et al found that the minimum incident-electron energies to form displacement-related defects are 180, 210, and 220 keV, respectively, for the [100], [111], and [110] orientations using a transmission electron microscope (TEM) [8]. Campbell and Mainwood predicted the radiation damage of diamond caused by both electron and gamma irradiation [9]. More recently,
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