On the electrical and charge conduction properties of thermally evaporated MoO x on n- and p-type crystalline silicon
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On the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon Murat Gu¨lnahar1, Hisham Nasser2,* 1 2
, Arghavan Salimi2, and Ras¸ it Turan2
Department of Electricity and Energy, Vocational School, Erzincan Binali Yıldırım University, 24200 Erzincan, Turkey The Center for Solar Energy and Applications (GUNAM), Middle East Technical University (METU), 6800 Ankara, Turkey
Received: 17 June 2020
ABSTRACT
Accepted: 12 November 2020
In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoOx, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current–voltage (I–V), transmission line measurements (TLM), and temperaturedependent current–voltage measurements (I–V–T). XRD diffraction spectrum shows that the deposited MoOx film exhibits amorphous nature. From TLM measurements, the values of contact resistivity are calculated to be qc : 55.9 mXcm2 for Ag/MoOx/n-Si and qc : 48.7 mX-cm2 for Ag/MoOx/p-Si. The barrier parameters such as barrier height (/e ) and ideality factor (n) are investigated by the thermionic emission theory for I–V and I–V–T measurements. The /e , n, and conventional Richardson plot demonstrate resolute temperature dependency, obeying the barrier height of Gaussian distribution model. The uniform barrier height values are calculated to be /b :1.24 eV for Ag/MoOx/n-Si and /b :0.66 eV for Ag/MoOx/p-Si from the extrapolation of /e at n ¼ 1 of the linear fitting of the variation with the experimental barrier height /e with ideality factor. The activation energy (Ea ) and Richardson constant (A*), obtained from Richardson plot, are much smaller than /b and the theoretical values of n- and p-type c-Si. The modified Richardson plot yields more reliable Richardson constant and homogeneous barrier height values of 106.2 Acm-2 K-2 and 1.21 eV, 23.4 Acm-2 K-2 and 0.63 eV for Ag/MoOx/n-Si and Ag/MoOx/p-Si heterostructures, respectively. The results demonstrate that thermally evaporated MoOx has particular advantages due to its good rectifying characteristics such as the extra enhancement to barrier height and low contact resistivity for interfacial layer applications.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
Address correspondence to E-mail: [email protected]
https://doi.org/10.1007/s10854-020-04884-5
J Mater Sci: Mater Electron
1 Introduction Metal–oxide–semiconductor (MOS) structures are still widely investigated due to their inert properties. Full understanding of the nature of MOS structures is of great interest related to their technological importance and their wide technological applications including integrated microelectronic devices such as optoelectronic devices, phototransistors, photovoltaic solar cells, and field effect transistors [1, 2]. The performance of MOS structures is affected by different activities such as the dopants concentration of the semiconductor substrate, bandgap, work funct
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