A comparative study on the electrical properties and conduction mechanisms of Au/ n -Si Schottky diodes with/without an
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A comparative study on the electrical properties and conduction mechanisms of Au/n‑Si Schottky diodes with/without an organic interlayer Ayşegül Eroğlu1 · Selçuk Demirezen2 · Yashar Azizian‑Kalandaragh3,4 · Şemsettin Altındal1 Received: 25 April 2020 / Accepted: 12 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In order to see an interlayer on the electrical parameters and conduction mechanisms (CMs), both the metal–semiconductor (MS) and Au/(MgO-PVP)/n-Si Schottky diodes (SDs) were grown onto the same wafer with 〈100〉 orientation and 350 μm thickness. Next, their electrical parameters, such as the ideality factor (n), barrier height (ΦB), and series resistances (Rs) were obtained from the current–voltage (I–V) measurements using thermionic emissions, theory, and Cheung and Norde functions and compared. The energy-dependent distribution of interface traps/states (Dit/Nss) of these two structures were extracted from the I–V data in the forward biases by considering the voltage-dependent n and ΦB. Experimental results confirmed that the Nss for a metal–polymer–semiconductor is considerably lower than for an MS, and it increases from the mid-gap towards the edge of the conduction band (Ec). The ln(I)–ln(V) curves have three straight lines which correspond to low, moderate, and high biases, and CM is governed by ohmic, trap/space-charge-limited current, respectively. When comparing these results, MgO-PVP leads to considerably improving the performance of the MS in respect of lower values of Nss, Rs, the reverse saturation current (Io) and higher values of the rectifying rate, ΦB, and the shunt resistance (Rsh), and hence it can be successfully used instead of a traditional insulator interlayer.
1 Introduction Great attention has recently been drawn towards increasing the quality of Schottky diodes (SDs) to control of the ΦB at the metal–semiconductor (M/S) interface using an interlayer. Especially, the choice of the interlayer, its thickness and permittivity are more important for improving the performance of these devices. This novel structure obtained by using an interfacial layer exhibits physical and chemical properties which have quite different electrical and dielectric properties from those of their bulk counterparts [1–10]. Namely, * Selçuk Demirezen [email protected] 1
Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey
2
Sabuncuoğlu Şerefeddin Vocational School of Health Services, Amasya University, Amasya, Turkey
3
Department of Physics, University of Mohaghegh Ardabili, P.O. Box 179, Ardabil, Iran
4
Department of Engineering Sciences, Sabalan University of Advanced Technologies (SUAT), Namin, Iran
this modification induces drastic changes in the electronic properties. Therefore, an interfacial layer or insulating layer plays an essential role in junction parameters such as the reverse saturation current (Io), the rectifying rate (ΦBo), the ideality factor (n), series resistance (Rs), and interface traps/ states (D
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