Optical Absorption of Impurities and Defects in SemiconductingCrystals
Absorption spectroscopy provides information on the chemical nature, atomic structure and concentration of hydrogen-like centers, to which belong most of the dopants of semiconductors and insulators. In this book, an introduction to the bulk optical prope
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solid-state sciences
158
Springer Series in
solid-state sciences Series Editors: M. Cardona P. Fulde K. von Klitzing R. Merlin H.-J. Queisser H. St¨ormer The Springer Series in Solid-State Sciences consists of fundamental scientif ic books prepared by leading researchers in the f ield. They strive to communicate, in a systematic and comprehensive way, the basic principles as well as new developments in theoretical and experimental solid-state physics.
Please view available titles in Springer Series in Solid-State Sciences on series homepage http://www.springer.com/series/682
Bernard Pajot
Optical Absorption of Impurities and Defects in Semiconducting Crystals Hydrogen-like Centres
With 150 Figures
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Dr. Bernard Pajot Institut des NanoSciences de Paris, Campus B oucicaut rue de Lourme l 140, 75015 Paris, France E-mail: [email protected]
Series Editors: Professor Dr., Dres. h. c. Manuel Cardona Professor Dr., Dres. h. c. Peter Fulde∗ Professor Dr., Dres. h. c. Klaus von Klitzing Professor Dr., Dres. h. c. Hans-Joachim Queisser Max-Planck-Institut f¨ur Festk¨orperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany ∗ Max-Planck-Institut f¨ ur Physik komplexer Systeme, N¨othnitzer Strasse 38 01187 Dresden, Germany
Professor Dr. Roberto Merlin Department of Physics, University of Michigan 450 Church Street, Ann Arbor, MI 48109-1040, USA
Professor Dr. Horst St¨ormer Dept. Phys. and Dept. Appl. Physics, Columbia University, New York, NY 10027 and Bell Labs., Lucent Technologies, Murray Hill, NJ 07974, USA
Springer Series in Solid-State Sciences ISSN 0171-1873 ISBN 978-3-540-95955-7 e-ISBN 978-3-540-95956-4 DOI 10.1007/b135694 Springer Heidelberg Dordrecht London New York Library of Congress Control Number: 2009929171 c Springer-Verlag Berlin Heidelberg 2010 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilm or in any other way, and storage in data banks. Duplication of this publication or parts thereof is permitted only under the provisions of the German Copyright Law of September 9, 1965, in its current version, and permission for use must always be obtained from Springer. Violations are liable to prosecution under the German Copyright Law. The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use.
Cover design: eStudio Calamar Steinen Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Foreword
During World War II and in the years immediately following its end, the importance of silicon and germanium as semiconductors and their potential for solid state electronics became very apparent. The growth of bulk semiconductors, free from structural and
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