Optical and electrical properties of a-AgSbS 1.5 Se 0.5 chalcogenide thin films
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ORIGINAL PAPER
Optical and electrical properties of a-AgSbS1.5Se0.5 chalcogenide thin films Y A El-Gendy* Physics Department, Faculty of Science, Helwan University, Ain Helwan, Cairo, Egypt Received: 19 April 2019 / Accepted: 19 July 2019
Abstract: AgSbS1.5Se0.5 films were deposited by e-beam evaporation technique onto clean glass substrates. The structural characterization of the deposited film was conducted using X-ray and transmission electron microscope techniques. The atomic percent of the constituent elements of the deposited films was investigated using energy dispersive X-ray spectrometry. The effect of thermal annealing on the structural and the optical properties of the deposited films has been studied. The transmission and reflection spectra of the deposited film were recorded in the wavelength range of 550–2500 nm. The refractive index, film thickness, and the optical absorption coefficient of the deposited film were successfully determined from the transmission spectrum employed the Swanepoel method. The dispersion of the refractive index was discussed in terms of Wemple–DiDomenico single oscillator model. Analysis of the optical absorption coefficient revealed a non-direct optical transition, where the optical band gap energy was calculated. Hot probe test revealed that the deposited films showed p-type conduction. The electrical properties of the deposited film have been studied during heating/cooling cycles in the temperature range 303–525 K, where the activation energy of the conduction was determined. p-AgSbS1.5Se0.5/n-CdS/ITO heterojunction solar cell fabricated in circular shape has been studied and the cell efficiency was evaluated. Keywords: Thin films; Chalcogenide; Structure properties; Optical properties; Electrical properties PACS Nos.: 73.50.Gr; 78.66.Bz; 73.61.Ph
1. Introduction Thin films of ternary chalcogenide materials have recently attracted much attention due to their uses in an expanding variety of many important technological applications, in addition to the low cost of their preparation processes [1–7]. As a result of the materials’ ideal optical properties, they are suggesting a promising candidate for solar cell applications [8–10]. Additionally, one of the most advantageous properties is its uses in the phase-change materials [11, 12]. Great attention in the field of photovoltaic applications has also been conducted in the past few years to modify the properties of the material via formation quaternary chalcogenide materials. AgSb(SxSe1-x)2 chalcogenide thin film materials are of considerable interest for many technological applications
*Corresponding author, E-mail: [email protected]
[8, 10, 13–16]. The effect of annealing temperature on the properties of the amorphous-to-crystalline phase transition of AgSbSe2 thin films has been already studied by our research group [13]. AgSbSe2 (with optical band gap, Eg of * 1 eV [13, 14]) as well as AgSbS2 (with Eg = 1.7 eV [15, 16]) ternary thin film materials are suggesting a promising candidate for number of different
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