Optimisation of ZnO Thin Films Implants, Properties, and Device Fabr
This monograph describes the different implantation mechanisms which can be used to achieve strong, reliable and stable p-type ZnO thin films. The results will prove useful in the field of optoelectronics in the UV region. This book will prove useful to r
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Optimisation of ZnO Thin Films Implants, Properties, and Device Fabrication
Optimisation of ZnO Thin Films
Saurabh Nagar Subhananda Chakrabarti •
Optimisation of ZnO Thin Films Implants, Properties, and Device Fabrication
123
Saurabh Nagar Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai, Maharashtra India
ISBN 978-981-10-0808-5 DOI 10.1007/978-981-10-0809-2
Subhananda Chakrabarti Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai, Maharashtra India
ISBN 978-981-10-0809-2
(eBook)
Library of Congress Control Number: 2017938554 © Springer Nature Singapore Pte Ltd. 2017 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer Nature Singapore Pte Ltd. The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721, Singapore
Preface
Extensive research is currently carried out on ZnO as a potential material for the fabrication of optoelectronic devices such as laser diodes (LDs) and light-emitting diodes (LEDs) in the ultraviolet (UV) region because of its wide bandgap (3.437 eV at 2 K) and a large excitonic binding energy of 60 meV at room temperature. However, the bottleneck in ZnO-based devices is the creation of reliable and reproducible p-type films, because ZnO is an intrinsically n-type material due to defects such as oxygen vacancies and zinc interstitials. The low solubility of dopants and self-compensating process on doping further aggravate the problem. This monograph describes the different implantation mechanisms which can be used to achieve strong, reliable and stable p-type ZnO thin films which would result in revelations in the optoelectronics field in the UV region. This monograph will be very useful for new doctorant students who want to work o
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