Optoelectronic and non-linear optical properties of Lu-doped AgGaGe 3 Se 8 crystallites
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Optoelectronic and non‑linear optical properties of Lu‑doped AgGaGe3Se8 crystallites I. V. Kityk1,4 · G. L. Myronchuk1 · M. Lelonek2 · P. Goring2 · L. Piskach3 · B. Vidrynsky1 · A. Ryzhuk1 · A. O. Fedorchuk5 · J. Jedryka4 Received: 7 September 2019 / Accepted: 25 June 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract A complex studies of optoelectronics, non-linear optical and laser stimulated piezoelectric features of chalcogenide powder-like chalcogenide crystals pure and rare earth doped AgGaGe3Se8 crystallites are presented. It is shown principal role of the morphology for the titled materials. The contribution to nonlinear optical, photoconductivity and laser stimulated piezoelectricity are comparable. The temperature dependences are explored. The possibilityity to operate by the features of the titled crystallites in the optically reflected regime is shown. This may be important for laser operated triggers, modulators, photo detectors etc. The relaxation processes are studied. Among the NLO features main attention is devoted to second harmonic generation efficiencies in the reflected regime where principal role is played by morphology. Additionally the laser stimulated piezoelectric for the near the surface states with different morphology of grains is explored. It is demonstrated that contribution of the near-the surface states for such kind of effects will be commensurable to the bulk-like contribution. Keywords Optoelectronic materials · Optical properties · Laser stimulated effects
* G. L. Myronchuk [email protected] I. V. Kityk [email protected] 1
Department of Experimental Physics and Information‑Measuring Technology, Lesya Ukrainka Eastern European National University, Voli Avenue 13, Lutsk 43025, Ukraine
2
SmartMembranes GmbH, Heinrich‑Damerow‑Str. 4, 06120 Halle, Germany
3
Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025 Lutsk, Ukraine
4
Institute of Optoelectronics and Measuring Systems, Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17 Str., 42‑200 Czestochowa, Poland
5
Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska St., Lviv 79010, Ukraine
13
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I. V. Kityk et al.
1 Introduction Recently, one can observe an enhanced interest in the design of IR optically triggered and operated devices based on chalcogenides. Particular interest presents the ternary and quaternary crystals (Kityk et al. 2004; Bi et al. 2007; Kulyk et al. 2009; Sahraoui et al. 2010; Iliopoulos et al. 2013). Chalcogenide crystals, unlike oxides, have larger transparency region that covers also the mid-IR spectral range (Liang et al. 2017). During transition from S to Se to Te halogens become more polarizable, the band gap energy decreases, and nonlinear optical susceptibilities both of the second as well as third order are enhanced. At the same ti
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