Organic Contamination of Silicon Wafer in Clean Room Air and its Impact to Gate Oxide Integrity
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ABSTRACT Organic adsorbates on silicon wafer surfaces exposed to superclean room air were measured to evaluate organic contamination level of silicon wafers stored in a clean bench up to 180min. Such Si wafers were thermally oxidized and the dielectric degradation behavior were systematically investigated. It is found that a carbon contamination level of half a monolayer influences the charge to quasi-breakdown although the degradation mechanism itself remains unchanged.
INTRODUCTION Dielectric degradation of ultrathin (
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