Oriented Crystallization on Amorphous Substrates
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it
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MICRODEVICES
Physics and Fabrication Technologies
Series Editors: Ivor Brodie and Julius J. Muray SRI International Menlo Park, California
ELECTRON AND ION OPTICS Miklos Szilagyi GaAs DEVICES AND CIRCUITS Michael Shur ORIENTED CRYSTALLIZATION ON AMORPHOUS SUBSTRATES E. I. Givargizov SEMICONDUCTOR LITHOGRAPHY Principles, Practices, and Materials Wayne M. Moreau
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Oriented Crystallization on Amorphous Substrates E. I. Givargizov Institute 01 Crystallography Academy 01 Seiences 01 the USSR Moscow , USSR
Springer Science+Business Media, LLC
Llbrary of Congress Cataloglng-ln-Publleatlon Data
Glvarglzov . E. r. (Evgenl' Ivanov tch i Oriented crystall1zatlon on a.orphous substrates I E.r. Glvarglzov. p. e•. -- lMlcrodevlces.l Translat ion fra. the Russlan. Includes blbllographleal references and lndex. 1. Ss.lconductor films . 2. Crystals--Growth . substaness . I . Tltle . 11 . Serles .
3 . Amorphaus
TK7871 .15.F5G58 1990 621.381' 52 --dc20
90-45319
CIP
ISBN 978-1-4899-2562-6 ISBN 978-1-4899-2560-2 (eBook) DOI 10.1007/978-1-4899-2560-2
© 1991 Springer Science+Business Media New York Originally published by Plenum Press, New York in 1991. Softcover reprint of the hardcover Ist edition 1991
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Preface Present-day science and technology have become increasingly based on studies and applications of thin films. This is especially true of solid-state physics, semiconductor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use films with an ordered structure, especially single-crystalline films, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystalline films have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1 um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and /or functions might depend on three-dimens