Performance Comparisons of Abrasive Containing and Abrasive Free Slurries for Copper Low-k CMP
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constant materials are good alternatives for use as metal lines and interlayer dielectric to address the problem. High dishing causes smaller line dimensions, thus increasing the resistivity of the metal lines. High erosion causes thinner inter-line spacing, and leads to higher capacitance between the lines, causing the RC delay time to increase. Obviously, the Cu CMP process remains one of the most challenging steps in dual damascene technology. This process must achieve global and withindie planarization of electro-deposited copper (which displays considerable topography), and then remove an overburden of the copper, thereby defining the copper lines in the trenches. The barrier layer whose material properties are significantly different than those of copper must be removed with minimal defects created, and limited loss of the desired copper line thickness and dielectric material. Moreover, the adhesion of capped layer film to the dielectric and the modulus of the dielectric film in the case of ultra low k dielectrics (K
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