Phosphorene: An emerging 2D material
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Phosphorene: An emerging 2D material Kiho Cho, Jiong Yang, and Yuerui Lua) Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia (Received 20 December 2016; accepted 13 February 2017)
Phosphorene has recently gained tremendous interest in the current decade, specifically, black phosphorus monolayer, a unique 2D material, investigation of which has led toward the creation of new scientific discoveries for future optoelectronic sensor devices. Beyond the success of graphene and other 2D layered materials research over the past decades, the increased interest toward this new emerging single-element structured material is because of its layer dependent 0.3–2.0 eV band gap modulation range which is also the band gap modulation range of single- and few-layered graphene and transition metal dichalcogenides (TMDs). Besides that, phosphorene allows strong light-matter interactions at resonance because of its unique physical structure and outstanding electrical and optical properties. Therefore, current advancements are being done to enhance the performance of phosphorene thin films because of its applicability in different fields. This paper is aimed to highlight key properties, applications, and future perspects and challenges incurred regarding the use of 2D layered phosphorene.
I. INTRODUCTION
A well-known revolutionary 2-dimensional (2D) material graphene has been widely explored since its discovery to investigate its fundamental physics to find its applicability in practical applications. Among many remarkable properties, graphene’s good transport properties, and high thermo-mechanical properties have proven its strong suitability in nanoelectronics and photonics. However, symmetrical electrical band structure of semi-metallic graphene at Dirac point, i.e., zero band gap energy limits its use for many optoelectronic applications. Therefore, many remarkable efforts have been done to increase its band gap (Eg).1–6 To address these issues, simultaneously, a lot of research has been made toward semiconducting materials such as transition metal dichalcogenides (TMDs) and insulating materials such as hexagonal boron nitride (h-BN), silicene, and phosphorene, at quite a rapid pace. Among 2D family of materials, phosphorene, a single atomic layer of black phosphorus (BP), has recently attracted significant attention due to its interesting strong angle dependent opto-electronic properties and anisotropic characteristics. In particular, by filling the large gap of unresolved properties such as energy gap,4,6–11 charge carrier mobility,12–16 current on/off ratio16–18 and response time19,20 between graphene and
Contributing Editor: Venkatesan Renugopalakrishnan a) Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/jmr.2017.71
TMDs, this unique feature is coming to the forefront of next generation nano-sized electronic devices. Above all, a widely tunable band gap (Eg) of phosphorene is one of the great advantage
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