Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling
- PDF / 1,391,776 Bytes
- 11 Pages / 595.276 x 790.866 pts Page_size
- 12 Downloads / 226 Views
Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling Karolina Pie˛tak1,2,* , Sebastian Złotnik1,4 , Ewelina Rozbiegała1,3 Marek Wo´jcik1, Jarosław Gaca1, and Mariusz Rudzin´ski1
, Paweł P. Michałowski1
,
1
Łukasiewicz Research Network - Institute of Electronic Materials Technology, Wólczyn´ska 133, 01-919 Warsaw, Poland Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00-664 Warsaw, Poland 3 Faculty of Materials Science and Engineering, Warsaw University of Technology, Wołoska 141, 02-507 Warsaw, Poland 4 Present address: Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland 2
Received: 30 April 2020
ABSTRACT
Accepted: 25 August 2020
Phosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-doped (Al)GaN structures have not been systematically evaluated, regarding structural verification and elemental distribution. Here, comprehensive studies of P ions impact on structural degradation are presented. Furthermore, a post-implantation annealing conducted at different temperatures is examined as well. The results demonstrated that the structural changes in the examined compounds, namely GaN and Al0.1Ga0.9N, due to P implantation and a subsequent recovery by thermal annealing follow similar trends. Interestingly, it was revealed that P diffusion length is higher in AlGaN than in GaN, possibly due to higher oxygen content in Al-containing compounds, analogous to Mg dopant. Additionally, the initial Mg concentration in (Al)GaN is crucial because too high Mg doping could be the main cause of electrical properties degradation of (Al)GaN heterostructures after P ion implantation.
Ó
The Author(s) 2020
1 Introduction Gallium nitride (GaN)-based materials with a direct bandgap are widely used in optoelectronic and electronic devices such as light-emitting diodes, high
power, and speed transistors [1]. In these compositions, it is important to obtain a material with a particular conductivity type. N-type doping of aluminium gallium nitride (AlGaN) is rather well established and controlled [2], while achieving a
Karolina Pie˛tak and Sebastian Złotnik contributed equally to this work.
Address correspondence to E-mail: [email protected]
https://doi.org/10.1007/s10854-020-04342-2
J Mater Sci: Mater Electron
p-type AlGaN with good electrical parameters remains a challenge. Ion implantation is one of the methods to introduce the additives to the structure. Basically, it consists two stages: (i) the ion beam bombardment of a layer with a high enough specific energy (more than 50 keV) and (ii) post-process heating. Depending on the dopants that are introduced into the GaN-based structure, there may be different effects, mainly changes in electrical and optical parameters. For example, GaN implanted with
Data Loading...
