Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaA
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pact of Ion Implantation on Quantum Dot Heterostructures and Devices
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
Arjun Mandal Subhananda Chakrabarti •
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
123
Arjun Mandal Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai, Maharashtra India
ISBN 978-981-10-4333-8 DOI 10.1007/978-981-10-4334-5
Subhananda Chakrabarti Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai, Maharashtra India
ISBN 978-981-10-4334-5
(eBook)
Library of Congress Control Number: 2017938314 © Springer Nature Singapore Pte Ltd. 2017 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer Nature Singapore Pte Ltd. The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721, Singapore
Preface
This monograph reports the findings of a detailed investigation of the impact of ion implantation on the material, electrical and spectral properties of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from a system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properti
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