Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy
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Photophysical performance of Nd‑YAG annealed Pt/n‑PSi /Pt photovoltaic photodetectors at different laser energy Asad A. Thahe1 · Basamat S. Shaheen2 · M. B. Uday3 · Mundzir Abdullah4 · M. A. Qaeed5 · Hasan Alqaraghuli6 · Nageh K. Allam2 Received: 22 June 2020 / Accepted: 3 October 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract This study investigates the electrical and photoresponse properties of Nd-YAG annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was deposited on a single crystalline n-type Si via photoelectrochemical etching in aqueous hydrofluoric acid at 45 mA cm−2 for 30 min. Annealing of the n-PSi layer was conducted using a Q-switching Nd:YAG laser at different fluence laser energies (20, 30, 40, 60 mJ cm−2) with a pulse duration of 10 ns. The effect of Nd:YAG laser irradiation on the morphological and structural properties of the deposited n-PSi layer was determined. The n-PSi sample synthesized at 40 mJ cm−2 showed the maximum average discrepancy. The photodetectors fabricated using such materials showed very high sensitivity (1527.9) and low dark current (2.58 × 10−4 A) with an internal photoconductive gain of 16.27, photoresponse of 3.1 A W−1, response time of 0.29 s, and recovery time of 0.45 s. These exceptional properties of the fabricated photodetectors indicate that the laser annealing approach is a viable tool for the synthesis of n-PSi that is suitable for various applications. Keywords Photodetector · Porous silicon · Nd:YAG laser · Laser fluence · Photoresponse
* Asad A. Thahe [email protected] * Nageh K. Allam [email protected] 1
Physics Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Johor Bahru, Malaysia
2
Energy Masteries Laboratory, School of Science and Engineering, The American University in Cairo, New Cairo 11835, Egypt
3
Centre for Advanced Composite Materials (CACM), School of Mechanical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
4
Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 USM Bayan Lepas, Penang, Malaysia
5
Physics Department, Faculty of Science, University of Jeddah, Jeddah, Saudi Arabia
6
Mechatronics and Automatic Control Department, Faculty of Electrical Engineering, Universiti Technology Malaysia, 81310 Johor Bahru, Malaysia
13
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1 Introduction The remarkable properties of porous silicon (PSi), which stem from its uniform morphology has unravelled novel applications in the manufacture of Si-based optoelectronics. However, the efficiency of such devices is complicated by the fabrication process required to achieve nanostructures with desirable features. Electrochemical etching is an appropriate method for fabricating n-PSi with a wide array of morphologies. The optoelectronic properties of the grown n-PSi are considerably influenced by the porosity (size, shape, homogeneity, and density distribution), m
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