Photovoltaic performance and electrochemical impedance spectroscopy analysis of CdS/CdSe-sensitized solar cell based on
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Photovoltaic performance and electrochemical impedance spectroscopy analysis of CdS/CdSe‑sensitized solar cell based on surfactant‑modified ZnS treatment Mahmoud Samadpour1 · Mehdi Dehghani2 · Parisa Parand1 · Morteza Natagh Najafi3 · Ershad Parvazian2 Received: 31 March 2020 / Accepted: 18 May 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Among the various approaches, ZnS treatment is the most convenient method for reducing the charge recombination in quantum dot-sensitized solar cells (QDSSCs). Here an improved method of ZnS treatment is explained for efficiency enhancement in QDSSCs. To get to the goal of device performance improvement, it is essential to have a uniform deposited layer. We utilized Triton X-100 (TX-100) as a surfactant to the convenient aqueous precursors during ZnS deposition by successive ionic layer adsorption and reaction method. It helps to decrease in contact angle and increase in wettability of the aqueous precursor and results in a more uniform deposited layer. The effect of modified ZnS treatment on the charge transport properties of the cells is investigated by voltage decay measurement and impedance spectroscopy methods. Our results show that increasing recombination resistance is one of the most important roles of ZnS treatment. This study indicates that ZnS deposition from low surface tension precursors can be systematically used in QDSSCs to enhance the performance of the cells. Keywords Solar cell · Quantum dot · ZnS · Triton X-100
1 Introduction Unlike fossil fuel-based energy sources, almost all categories of photovoltaic solar cells (PVs) are cheaper, cleaner, and all-around better energy solutions with more ease to use [1]. Among all types of PVs, third-generation solar cells such as dye-sensitized solar cells (DSSCs), perovskite solar cells (PSCs), and QDSSCs have attracted much attention due to their intrinsic optoelectronic properties and high power conversion efficiency [2–4]. As well as their * Mahmoud Samadpour [email protected] * Mehdi Dehghani [email protected] * Ershad Parvazian [email protected] 1
Department of Physics, K. N. Toosi University of Technology, PO Box 15418‑49611, Tehran, Iran
2
Physics Department, Sharif University of Technology, PO Box 11155‑9161, Tehran, Iran
3
Department of Physics, University of Mohaghegh Ardabili, P.O. Box 179, Ardabil, Iran
photovoltaic advantages, their large material abundance, simple fabrication methods, and low production cost, make them considered as an alternative future generation energy utilization for commercial as well as home applications [5]. Also, third-generation solar cells could, in fact, overcome the Shockley–Queisser theoretical limitation by proposing several approaches to increase the number of extracted charges [6–8]. Among the third-generation nanostructured solar cells, semiconductor QDSSCs have gained more attention in recent years due to their high extinction coefficients and significant intrinsic dipole moments [9–11]. Their optoelectronic pr
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