The performance analysis of the GaAs/c-InN solar photovoltaic cell hetero-structure: temperature dependence
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The performance analysis of the GaAs/c‑InN solar photovoltaic cell hetero‑structure: temperature dependence Tugce Ataser1 Received: 6 March 2020 / Accepted: 29 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The numerical analysis of the GaAs/c-InN solar photovoltaic cell (SPC) hetero-structure has been investigated by means of an analytical solar cell model in the temperature range 200–400 K to determine and develop solar cell performance. Temperature-band gap dependency for GaAs and InN materials has been determined by Varshni and Pässler models. Then, the performance of the SPC was obtained by basic electrical parameters such as short circuit current density, open circuit voltage and conversion efficiency. For the proposed GaAs/c-InN SPC, theoretical calculations were predicted optimum electrical parameters, JSC, VOC and η were 30.47 mA/cm2, 1.60 V and 30.55% at room temperature under AM1.5G spectrum, respectively. Additionally, it was observed that with the increase in the oc cell temperature, J sc increases slightly due to the energy band gap narrowing whereas V decreases, thereby leading to the decrease in the efficiency of SPC. This theoretical study can be helpful in supporting the developed of high efficiency new generation solar cell by studying the role of different hetero-structure materials. Keywords GaAs/c-InN · Theoretical calculations · Solar photovoltaic cell · Electrical parameters · Temperature-dependent effect
1 Introduction At the present time, solar energy is an efficient, noise-free, clean and renewable resource to meet the increasing energy demand. Solar energy, in the form of electromagnetic radiation, could be easily converted into useable electrical energy using Solar Photovoltaic Cell (SPC). The SPCs are generally divided into three generations: (i) first-generation (Multicrystalline and single-crystalline silicon), (ii) second-generation (copper indium gallium selenide (CIGS) and cadmium telluride (CdTe) etc.,) (iii) third-generation (dye-sensitized solar cell (DSCs), organic photovoltaics (OPVs) and quantum dot solar cells (QDSCs) etc.,). The highest “one-sun” cell and record modules for Si, GaAs, CIGS and CdTe have reached 24.4%, 25.1%, 19.2% and 18.6%, respectively (Green et al. 2019). In additional, the proposed SPCs hetero-structure such as c-GaN/GaAs and GaAs/c-InN can be * Tugce Ataser [email protected] 1
Photonics Application and Research Centre, Gazi University, 06500 Ankara, Turkey
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promising photovoltaic devices. Cruz et al. (2017) reported that the conversion efficiency of c-GaN/GaAs hetero-structure solar cell was 23% and 25% for n–i–p and n–p configurations, respectively. For developing new SPC architecture, Indium nitride (InN) and gallium arsenide (GaAs) are promising photovoltaic materials due to the matched lattice and photocurrent. Indium nitride (InN) synthesized in the metastable cubic phase (c-InN) is an attractive material for the electro-optical appli
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