Preparation and Optical Properties of Ultrathin Silicon Films
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FIGURE 1. Time evolution of layer thicknesses in the early stage of a-Si:H growth on Cr. For t < 10 s, the nucleating film can be modeled as one layer of thickness d (triangles), consisting of a mixof bulk a-Si:H and void. The shows the void volume fraction versus d in this regime (squares); the solid line represents a calculation for the growth of hemispherical nuclei on a 40 A grid. For t > 10 s, the coalescing film must be modeled as two layers. The underlying layer of
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etched film can be modeled as one of thickness d (circles), consisting of a mixture of c-Si daa*0.6 • and void. The inset shows the a,,m [ > void volume fraction versus d in 0 hsthregime (squares); the solid oi "0.4 00 ••- this "2 4 6 8 0.4> line represents a calculation for the etching of hemispherical nud(A) cleiona 15Agrid. Fort
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