Preparation and Photoelectric Properties of Patterned Ag Nanoparticles on FTO/Glass Substrate by Laser Etching and Drivi
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Preparation and Photoelectric Properties of Patterned Ag Nanoparticles on FTO/Glass Substrate by Laser Etching and Driving Layer Strategy Li‑Jing Huang1,3,4 · Gao‑Ming Zhang1,3,4 · Yao Zhang1,4 · Bao‑Jia Li2,3,4 · Nai‑Fei Ren1,4 · Lei Zhao1,4 · Yi‑Lun Wang1,4 Received: 16 July 2020 / Revised: 5 September 2020 / Accepted: 9 October 2020 © The Chinese Society for Metals (CSM) and Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract An effective method based on laser etching and driving layer strategy was proposed to prepare patterned Ag nanoparticles (Ag NPs) on fluorine-doped tin oxide (FTO)/glass substrate and thus to enhance the photoelectric properties. This method successively included depositing an aluminum-doped zinc oxide (AZO) driving layer, laser etching, depositing an Ag layer, furnace annealing and laser removal. Different AZO and Ag layer thicknesses were adopted, and the surface morphology, crystal structure and photoelectric properties were investigated. An Ag NPs/FTO/glass sample without an AZO driving layer was prepared for comparison. It was found that furnace annealing of the Ag layer combined with the AZO driving layer, rather than that without the AZO driving layer, was more conducive to generating patterned Ag NPs. Using a 20-nmthick AZO layer and a 150-nm-thick Ag layer led to the formation of uniformly distributed Ag NPs being aligned along the laser-etched grooves to form a pattern. The as-obtained sample had the best comprehensive photoelectric property with an average transmittance of 79.95%, a sheet resistance of 7.11 Ω/sq and the highest figure of merit of 1.50 × 10−2 Ω−1, confirming the feasibility of the proposed method and providing enlightenment for related researches of transparent conductive oxide-based films. Keywords Ag nanoparticle · Fluorine-doped tin oxide (FTO) · Photoelectric property · Laser etching · Driving layer
1 Introduction Transparent conductive oxide (TCO), as a kind of ceramic material, has been widely applied to photoelectric devices such as flat panel displays [1], solar cells [2, 3], organic light emitting devices (OLEDs) [4] and photosensors [5], due to its outstanding optical and electrical properties. Indium tin Available online at http://link.springer.com/journal/40195. * Bao‑Jia Li [email protected] 1
School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China
2
School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
3
Institute of Micro‑Nano Optoelectronic and Terahertz Technology, Jiangsu University, Zhenjiang 212013, China
4
Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013, China
oxide (ITO), which has been most often used in various optoelectronic applications in the past many years, has now been gradually replaced by other TCO materials because of the scarcity and toxicity of the indium element [6, 7]. Fluorine-doped tin oxide (FTO), as an n-type semiconductor, has a wide band gap ranging
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