Preparation and Properties of Infrared Transparent Conductive Thin Films
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1220-BB02-08
Preparation and Properties of Infrared Transparent Conductive Thin Films
Yiding WANG∗, Li LI, Junjing CHEN, Zhenyu SONG, Yupeng AN and Yu Zhang State Key Laboratory on Integrated Optoelectronics & College of Electronic Science and Engineering, Jilin University, Changchun 130012, P.R. China ABSTRACT This paper presents results for infrared transparent and conducting thin films based on In2O3. The films have been prepared by magnetrons sputtering equipment with different condition. Typical transmittance of 70%-80% with a film sheet resistance of 80-300Ω/□ in the 3.5-5.0µrn region has been achieved. Optically transparent and electrically conductive semiconductor Oxide films have been extensively studied in recent years. Such films have been prepared by various methods. In general, these films have high visible transmittance, but are opaque in the IR wavelength range of 1-12µm IR transmission. The infrared transparent and electrically conductive thin films are useful in certain important applications. For example, these films can be use as antistatic coatings, and while permitting a reasonable transmission coefficient for IR. Another obvious application is to serve as the conducting electrode for various optical devices where good infrared transmission is important. So, it is important to research indium oxide base infrared (3-5 um) transparent conduction thin films. It has been developed that preparation condition influence on properties of thin films. Such as the sputtering time, and pressure, and power, and the substrate temperature, had great influence on the crystal structure, optical and electrical properties of In2O3-based thin films. The In2O3-based thin films obtained were characterized and analyzed by X-ray Diffractometer (XRD), Atomic Force Microscope (AFM), Vander Pauw Method and Fourier Transform Infrared Spectroscopy (FTIR). INTRODUCTION Transparent conductive oxide (TCO) has been applied widely in liquid crystal displays, solar cells, organic light emitted devices, thermal reflection thin film, optical fibre [1-3], and so on since the high transmittance, and conductivity. The first TCO thin film is cadmium oxide (CdO) obtained by thermal oxidation of sputtered cadmium films reported by Badeker in 1907 [4]. Presently, TCO thin films that have been reported include tin-doped indium oxide (ITO), antimony -doped tin oxide (ATO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), and others metal oxide thin films [5-9]. ∗
Corresponding author: Tel.: +86 431 85168241-8212; e-mail:[email protected].
Indium trioxide or indium oxide (In2O3) thin film is polycrystalline bixbyite structure with band-gap of 3.75eV. In2O3 is an n-type material since the oxygen vacancies and indium interstices. The electric characteristics of In2O3 thin film can be improved by doping. Tin, zirconium, titanium, molybdenum, tungsten and so on have been used to enhance the performance of In2O3 thin film [10-14]. One of the most important characteristics for In2O3 thin film is transparent in infrared
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