Preview: 1988 MRS Fall Meeting: Boston, Massachusetts Events Scheduled November 27-December
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presentation of the Von Hippel Award and Graduate Student Awards.
Topical Symposia Symposium A—Processing and Characterization of Materials Using Ion Beams Tuesday-Friday, Nov. 29-Dec. 2 Chairs: Lynn E. Rehn, Argonne National Laboratory; Joe E. Greene, University of Illinois; Fred A. Smidt, Naval Research Laboratory. This Symposium will focus on ionsurface interactions, with particular emphasis on film-formation by ion-beamassisted and low-energy primary deposition, and on metastable materials formed by ion bombardment. Approximately 78 oral and 56 poster papers will cover: ionbeam-assisted deposition; beam-induced epitaxy, crystal growth, and interface migTation; characterization of ion-beammodified microstructures; amorphization and metastable phase formation; ion implantation/ion beam mixing; and properties of ion-beam-modified materials. A Joint plenary Session on Surfaces is planned with Symposium B; a Joint Session on Ion and Laser Modified Surfaces is planned with Symposium S. Invited Speakers include J-E. Sundgren, B.W. Dodson, J.R. McNeil, J. Dieleman, I. Yamada, D.M. Follstaedt, J.M.E. Harper, J.M. Poate, and J.W. Rabalais.
Symposium 6—Laser and Particle Beam Chemical Processes on Surfaces Tuesday-Friday, Nov. 29-Dec. 2 Chairs: A. Wayne Johnson, Sandia National Laboratories; G.L. Loper, Aerospace Corporation; T.W. Sigmon, Stanford University. Approximately 68 oral and 34 poster papers will consider the following topics: laser-induced deposition and etching; laser-assisted chemical modification and doping of solids; ion-beam and electronbeam assisted deposition and etching; beam-induced decomposition processes for surface-adsorbed molecules; laserinduced ablation of polymeric materials; plasma formation of reactants for deposition and etching; diagnostics and modeling of the fundamentals of beam-induced process chemistry and physics; deep UV and x-ray Synchrotron processing of thin films; in situ processing of thin films; and technological implications of beaminduced processing and process monitoring. A Joint plenary Session is planned with Symposium A. Invited Speakers include J-E. Sundgren, B.W. Dodson, J.R. McNeil, J. Dieleman, K. Kompa, C.I.H. Ashby, R.F. Miracky, V.M. Donnelly, A.F. Bernhardt, R.M. Osgood Jr., Ian W. Boyd, and K.F. Jensen Symposium C—Thin Films: Stresses and Mechanical Properties Monday-Wednesday, Nov. 28-30 Chairs: John C. Bravman, Stanford University; William D. Nix, Stanford University; David M. Barnett, Stanford University; David A. Smith, IBM T.J. Watson Research Center. Approximately 65 oral presentations will focus on macroscopic or microscopic phenomena from both experimental and theoretical viewpoints. Topics include, but are not limited to thin film microstructures and mechanical properties; in situ deformation studies of thin films; tailored microstructures for control of mechanical properties; intrinsic Stresses in thin films; epitaxy; direct observations of defects in thin films; deformation mechanisms in thin films; mechanical testing of thin films; and dfects in th
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