Preview: 1989 MRS Spring Meeting
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MRS BULLETIN/MARCH 1989
flow visualization and modeling, etc.), ex situ nondestructive characterization; novel growth techniques — beamassisted growth, atomic-layer epitaxy, submonolayer deposition, patterned growth, in situ processing (etching); and novel structures—quantum wires and boxes, graded structures. A poster session is planned as is a joint session on heteroepitaxy on Si with Symposium D. Invited speakers include A.Y. Cho, D.E. Aspnes, Y-M. Houng, H. Temkin, P.M. Petroff, L. Pfeiffer, T.H. Chiu, K.F. Jensen, G.B. Stringfellow, A.S. Jordan, Z. Liliental-Weber, A.E. Blakeslee, M. Y a m a g u c h i , N. C h a n d , T.P. Humphreys, and R. Bhat. Symposium B — Rapid Thermal
Annealing/Chemical Vapor Deposition and Integrated Processing
Tuesday-Friday, April 25-28 Chairs: David Hodul, Varian Research Center; Jeff Gelpey, Peak Systems; Thomas E. Seidel, Seidel Associates; Martin L. Green, AT&T Bell Laboratories. equipment exhibit. The short courses and exhibitors are listed elsewhere in This symposium has been expanded this issue. from a forum on RTP to include allied For details about the program and single wafer processing technologies. registration, see the 1989 MRS Spring The emphasis will be on materials proMeeting Preliminary Program, which cessing and also relevant equipment has been mailed to all MRS members. If and device issues. A panel discussion you need a Preliminary Program or and poster session will be used to define Short Course Brochure, call the MRS the key issues and future directions of Meetings Department at (412) 367-3003; these technologies. Approximately 74 fax (412) 367-4373. papers will span: rapid thermal processing— rapid oxidation, silicide and nitride formation, compound semiconductors, and contacts, glass reflow, Technical Symposia and implant activation; rapid thermal Symposium A—IH-V CVD—metal films, selective processes, Heterostructures for dielectric deposition, plasma-assisted Electronic/Photonic Devices processes, and polysilicon and episiliMonday-Thursday, April 24-27 con; integrated processing — in situ cleaning, wafer inspection, process Chairs: Charles W. Tu, University of monitoring (gas flow, temperature, end California at San Diego; Chuck Mattera, point); multistep fabrication schemes; AT&T Bell Laboratories; Arthur C. Gosand equipment issues. Invited speakers sard, University of California. include K.C. Saraswat, J.R. Hauser, H. Approximately 117 papers will focus Temkin, C.A. King, M.M. Moslehi, K. on the materials issues of epitaxial III-V Maex, I.D. Calder, M. Inoue, C.B. compound semiconductor heterostrucYarling, and R. Kakoschke. tures for electronic, photonic, and optoelectronic applications. Topics include: epitaxial growth of device structures — Symposium C—Ion Beam MBE, MO-MBE/CBE, OMVPE, VPE; Processing of Advanced Electronic safety—arsine and phosphine substiMaterials tutes, effluent gas scrubbing; heteroepiTuesday-Thursday, April 25-27 taxy — GaAs/Si, InP/GaAs, epitaxial insulators, metals, II-VI/III-V; tech- Chairs: Nathan Cheung, University of niques f
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