Preview: 2000 MRS Spring Meeting
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Preview: 2000 MRS Spring Meeting San Francisco Marriott and Argent Hotels • San Francisco, California Technical Meeting: April 24–28 • Exhibit: April 25–27 Meeting Chairs: Anna C. Balazs University of Pittsburgh Robert Q. Hwang Sandia National Laboratories Kevin S. Jones University of Florida Frances M. Ross IBM T.J. Watson Research Center The 2000 MRS Spring Meeting launches materials research into the next millennium with 34 symposia examining the current state of materials research, and giving some vectors for future work. The 2,300 oral and poster papers include many in joint sessions integrated into the technical program due to the significant interplay between symposium topics. Cross-cutting Symposium GG will be held on Analyzing, Predicting, and Preventing Disasters, spanning the range from semiconductor chip failure to concrete, from battleships to conflagrations, and from engines to asteroids. Traditionally held during the Fall Meeting, Symposium HH on Materials Science and Engineering Education in the New Millennium is offered for the first time at a Spring Meeting. Of the 24 proceedings volumes planned, 18 will be published electronically on the Web, available free to MRS members. Symposia A–E cover critical issues in the processing of silicon ranging from frontend processing to back-end metallization and chemical-mechanical polishing. Symposium A on amorphous silicon addresses ordering, metastability, high-rate deposition, solar cells, amorphous silicon structure, dynamics, thin-film transistors, and heterogeneous materials. A “Millennium Session” will look at early research on amorphous silicon, a 40-year trajectory of amorphous semiconductor research, and a European adventure in amorphous materials from past to future. A panel discussion will conclude the session. Front-end processing has become increasingly significant recently, as very shallow junctions are needed along with tight control of dopant profiles and defects as silicon devices are scaled down in size. Symposium B will address questions such as, “How far will ion implantation take us?” Symposium C delves into materials and technologies for high-dielectric-constant materials, novel gate insulators, silicides, and integration issues. Symposium D 74
extends the dielectric constant in the other direction. With air being a desirable low-k material, much of the research in this area is focusing on incorporating pores into appropriate materials. In addition to testing for electrical properties and reliability, mechanical properties will be covered. A wide variety of analysis techniques will be presented including x-ray and neutron analysis, ellipsometric porosimetry, and positron annihilation lifetime spectroscopy. A look at process integration and manufacturability will wrap these topics together. In the area of thin films, the Meeting will feature magnetoelectronics, polycrystalline films, corrosion, and epitaxy of oxides and semiconductors. Symposium F continues coverage of recording media and characterization. Some magnetic materials are tak
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