Process Diagnostics for Remote Plasma-Enhanced Chemical-Vapor Deposition (PECVD) of Silicon Nitrides
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A. BANERJEE and G. LUCOVSKY Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202 ABSTRACT Hydrogenated silicon nitride films were deposited in a remote plasma reactor using a plasmaexcited NH 3 /He mixture, and with downstream injection of SiH 4 . An electrically biased grid placed between the plasma tube and the deposition region was used to control the extent of the plasma afterglow into the deposition region. In situ monitoring by mass spectrometry (MS) indicated that the Si content of the film was increased when charged species were transported from the plasma region to the deposition region of the chamber, and that the properties of the resulting films could be understood in terms of two different deposition pathways, driven respectively by neutral, and a combination of neutral and charged precursor species. INTRODUCTION The remote plasma enhanced chemical vapor deposition (PECVD) process for silicon nitride thin films has gained interest due to its low deposition temperature (T
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