Production of B-doped reduced graphene oxide using wet-process in tetrahydrofuran
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Carbon Letters https://doi.org/10.1007/s42823-020-00192-4
ORIGINAL ARTICLE
Production of B‑doped reduced graphene oxide using wet‑process in tetrahydrofuran Yunseok Shin1 · Sungjin Park1 Received: 25 June 2020 / Revised: 9 September 2020 / Accepted: 19 September 2020 © Korean Carbon Society 2020
Abstract Graphene-based materials show excellent properties in various applications because of their electrical properties, large surface areas, and high tolerance for chemical modification. The use of wet-process is a promising way for their mass production. Heteroatom doping is one of the common methods to improve their electrical, physical, and electrochemical properties. In this work, we develop a new route for the production B-doped graphene-based materials using low-temperature wet-process, which is the reaction between graphene oxide suspensions and a BH3 adduct in tetrahydrofuran under reflux. Elemental mapping images show well-dispersed B atoms along the materials. Various spectroscopic characterizations confirm the reduction of the graphene oxide and incorporation of B atoms into the carbon network as high as ~ 2 at%. The materials showed electrocatalytic activity for oxygen reduction reactions. Keywords Reduced graphene oxides · B doping · Wet-process
1 Introduction Graphene-based materials show excellent properties as electrodes, electrocatalysts, and supports in various applications because of good electrical properties, large surface areas, and high tolerance for chemical modification [1, 2]. The use of wet-process is a promising way for their mass production cost-effectively. Chemical oxidation of graphite produces graphite oxide, which can produce single-layered graphene oxide (G-O) materials by exfoliation [1, 3]. The G-O has a wide variety of oxygen-containing functional groups such as hydroxyl, epoxy, carboxyl, and ketone group, which enables them to be dispersed as individual layers in various solvents [4, 5]. However, G-O is electrically insulating because of significant breakage of sp2 network during the oxidation [6]. Consequently, many researchers have developed reduction methods to restore such sp2 network by the removal of oxygen functionalities, generating electrically conductive reduced G-O (rG-O) materials [6, 7].
* Sungjin Park [email protected] 1
Department of Chemistry and Chemical Engineering, Inha University, 100 Inha‑ro, Michuhol‑gu, Incheon 22212, Republic of Korea
Introduction of heteroatom dopants, such as N, P, B, and S, into the rG-O materials is a common approach to improve their electrical, physical, and electrochemical properties [8, 9]. Thus, the resulting materials have often showed excellent properties as electrocatalysts for various electrochemical reactions. Among them, N-doped systems have been intensively studied [10–13]. However, there are a few examples investigating B-doped materials because of the lack of production methods. Some studies reported the generation B-doped rG-O materials with gas-phase boron sources using high-temperature treatments [10, 14
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