Progress and future directions for atomic layer deposition and ALD-based chemistry
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Introduction The field of atomic layer deposition (ALD) has seen significant changes and advancements over the past 30+ years.1–4 Significant research in the 1980s and 1990s examined crystalline and polycrystalline compound and elemental semiconductors for electronic, optoelectronic, and light-emitting diode applications, and research on oxides began to grow for superconducting and optical materials (for example, see articles in Reference 5). Research in ALD grew substantially in the late 1990s and early 2000s, most notably for high dielectric constant insulators, where ALD enabled thickness control at the nanometer and subnanometer scale, making ALD feasible to manufacture highspeed electronic logic circuits.6,7 Researchers are now exploring new ALD materials and ALD-type reactions that promise to expand applications and provide an interesting future for ALD. This issue of MRS Bulletin is designed to introduce readers to the current state of research in ALD and potential for the field to advance in critical application areas. We also want to familiarize researchers with molecular layer deposition (MLD) and vapor infiltration, which are pushing new synthesis routes for organic and hybrid organic-inorganic materials. To help achieve these
goals, this issue includes articles by several researchers active in the ALD field. Unfortunately, not all active researchers could be represented in this issue. However, an upcoming book on ALD will include detailed articles from other research groups.8 In this issue, the article by Leskelä et al. discusses new material capabilities. They summarize ALD advances to date on high dielectric constant insulators used in electronics and describe new opportunities for fluorides, phosphates, and lithium-based compounds. They also discuss processing of organics by MLD. ALD contributes significantly to many advancing nanotechnologies. The article by Bae et al. discusses ALD for nanoscale surface engineering and three-dimensional nanostructures, including semiconducting, magnetic, metallic, and insulating systems. An article by Elam et al. presents ALD applications in energy technologies, including solar cells, fuel cells, batteries, and catalysts. ALD is proving to be important for improved performance and function in several new energy conversion and storage conversion approaches, and rapid progress continues in this field. In addition to new device and nanotechnology applications, researchers in ALD recognize that innovation in process scaling and throughput will help promote and realize
Gregory N. Parsons, North Carolina State University, Raleigh, NC 27695, USA; [email protected] Steven M. George, University of Colorado, Boulder, CO 80309, USA; [email protected] Mato Knez, Max-Planck Institute of Microstructure Physics, Weinberg 2 D-06120 Halle, Germany; [email protected] DOI: 10.1557/mrs.2011.238
© 2011 Materials Research Society
MRS BULLETIN • VOLUME 36 • NOVEMBER 2011 • www.mrs.org/bulletin
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PROGRESS AND FUTURE DIRECTIONS FOR ATOMIC LAYER DEPOSITION AND ALD-BASED CHEMISTR
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