Properties of Chemically Modified Carbon Nanotubes
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Properties of Chemically Modified Carbon Nanotubes R. Kumashiro1, H. Ohashi1, T. Akasaka2, Y. Maeda3, S. Takaishi4, M. Yamashita4, S. Maruyama5, T. Izumida6, R. Hatakeyama6 and K. Tanigaki1,7 1
Department of Physics, Graduate School of Science, Tohoku University, Aoba Aramaki, Aoba-ku, Sendai, Miyagi 980-8578, Japan 2 Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan 3 Department of Chemistry, Tokyo Gakugei University, Koganei, Tokyo 184-8501, Japan 4 Department of Chemistry, Graduate School of Science, Tohoku University, Aoba Aramaki, Aoba-ku, Sendai, Miyagi 980-8578, Japan 5 Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan 6 Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aoba Aramaki, Aoba-ku, Sendai, Miyagi 980-8578, Japan 7 CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 322-0012, Japan ABSTRACT Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique. From the results of FET measurements, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.
INTRODUCTION CNTs have a bright prospect as electronic materials for nano-scale devices in the future, and a large number of studies have been made in recent years [1-3]. In particular, it is well known that the FETs fabricated from CNTs having semiconducting properties show high ability in terms of
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the mobility [4]. However, carriers in pristine CNTs are mostly holes, therefore, CNT-FETs usually show the p-type properties [5]. For applying CNTs to electronic devices, it is necessary to control the carriers of both electrons and holes, that is, the electron carrier doping should be established. As electron carrier doping techniques for CNTs, three major techniques are generally possible, substitution by hetero carbon atoms, endohedral doping, and exohedral modification. Recently, it has reported that the structural substitution of CNTs by hetero carbon atoms, such as group III or V element, changes the electronic properties of CNTs [6]. It has been also known that the doping into inner spaces of CNTs with alkali metals or organic molecules can change the properties of CNT-FETs [7,8]. Exohedral modifications for CNTs by organic reaction have been carried out for the purpose of purification, solubilization, functionalization, and so on [9,10]. However, a small number of studies have been made relating to the investigation of physical properties. In this study, we have made a chemical modification of CNTs using a Si-containing organic molecule of Si(ph)2tBu, and have examined how the FET properties of these chemically
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