A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application
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ORIGINAL PAPER
A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application L. Arivazhagan 1 & D. Nirmal 1
&
P. Pavan Kumar Reddy 1 & J. Ajayan 2 & D. Godfrey 1 & P. Prajoon 3 & Ashok Ray 4
Received: 2 June 2020 / Accepted: 10 August 2020 # Springer Nature B.V. 2020
Abstract In this paper, AlGaN/GaN High Electron Mobility Transistor (HEMT) with stacked passivation (Diamond/SiN) is proposed and investigated. The implementation of stacked passivation in HEMT has been shown to be effective in suppressing self-heating effect. Under the gate-terminal, the peak channel temperature of HEMT with stacked passivation is 384 K, whereas it is 393 K for conventional HEMT. The reduction of channel temperature in the proposed device is attributed to good heat-spreading via diamond. The thermal resistance (RTH) is extracted and it is found that RTH of proposed HEMT is 17% lower than that of the conventional HEMT. The transconductance of the proposed GaN-HEMT is also improved by 12%. Furthermore, the maximum drain current of 800 mA/mm at VGS = 0 V and VDS = 5 V is obtained for the proposed HEMT with a gate length of 0.25 μm. The proposed device is considered as one of the most attractive candidates for future high frequency and high-power applications over a wide range of operating temperatures. Keywords GaN . HEMT . Self-heating . Diamond . Therma resistance
1 Introduction In recent years, AlGaN/GaN-on-SiC HEMT receives a great attention in power amplifier and power switches due to their capability of delivering high power at high-frequency [1–3]. Technology innovations such as field plate engineering, backbarrier under GaN buffer and gate-length reduction further enhances the RF and DC performance of GaN HEMT. The performance metrics are breakdown voltage [4–6], drain current [7–9], output-power [10–13], unity current-gain cut-off frequency (fT) [14], maximum oscillation frequency (fMAX) etc. However, the improvement in these performance metrics increase the acceleration/velocity of electron in the channel under gate edge of the device. This results in increase of thermal resistance, reduction of total safe operating area, and
* D. Nirmal [email protected] 1
Karunya Institute of Technology and Sciences, Coimbatore, India
2
SNS College of Technology College in Coimbatore, Coimbatore, India
3
Jyothi Engineering College, Cheruthuruthy, Thrissur, India
4
Indian Institute of Technology, Guwahati, India
increase of channel temperature in the device [15]. Thermal failure and threshold failure levels in semiconductor device also occurs due to increased channel temperature. The increase in channel temperature results in self-heating effects which is a serious concern in modern AlGaN/GaN HEMT and an extensive investigation is required in this case. A continuous effort has been made to model and/or characterize the self-heating effect and thermal resistance [15, 16]. Very few efforts have been taken to reduce channel-temperature and thermal resistance in the device. Hence, there is a great space in
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