Advantages of Hydrogen Peroxide as an Oxidant for Atomic Layer Deposition and Related Novel Delivery System
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Advantages of Hydrogen Peroxide as an Oxidant for Atomic Layer Deposition and Related Novel Delivery System Jeff Spiegelman1, Dan Alvarez,Jr1, Russell J. Holmes1, Ed Heinlein1, and Zohreh Shamsi1 1 RASIRC, 7815 Silverton Ave, San Diego, CA, 92126, U.S.A. ABSTRACT Proposed is the use of Hydrogen Peroxide (H2O2) as the ideal oxidant for atomic layer deposition of metal oxide films. H2O2 has similar oxidation properties to Ozone while simultaneously having slightly stronger proton transfer properties than water. Vital to the success of any vapor phase chemistry is delivery of stable compositions, temperature and pressure. This study demonstrates the viability of a new membrane technology for the precise delivery of H2O2/ H2O mixtures starting from a liquid range of 30-70%. An in-situ gas phase cleaning process to remove carbon contamination from Ge(100) surfaces using gas phase H2O2 has been characterized. INTRODUCTION Atomic Layer Deposition (ALD) processing is currently moving toward high volume production for several applications1 including: High-k gate dielectrics (hafnium oxide, hafnium silicate): High-k capping layers for metal gate work function tuning; High-speed aluminum oxide for magnetic heads; Conformal passivation layers; and High-k for MEMS. A major advantage of ALD is that the self-limiting nature of the process enables fully conformal films. Another advantage is that a variety of materials can be formed at relatively low temperatures. ALD can be applied to produce various oxides, nitrides or other compounds. The surface control achieved with ALD allows single or tailored multiple layer deposition of thin, uniform and pinhole-free films over large areas. High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes.2 In these new material systems and devices, various electrically active defects are present at or close to the interface between the high-K dielectric and the alternative channel material that are a major concern for both the performance and the reliability of these new devices. For these devices, the use of ALD appears to be the only viable solution, as CVD and PVD lead to a disproportionate number of defects. Several challenges exist regarding manufacturability of ALD. These include precursor and oxidant optimization in order to achieve the highest quality films at the lowest possible temperatures. Moreover, new surface preparation methods are needed for these films, where near perfect surfaces are needed for defect-free initiation of ALD. The deposition of metal oxide films requires an oxidant precursor, typically water or ozone. Ozone is a strong oxidant and can provide high quality films. However, ozone must be generated in situ, is equipment intensive, hazardous and suffers from high cost. Water vapor delivered under controlled conditions can be used as an alternative with generally similar results for most film thicknesses. This is especially true with metal organic precursors which incorporate nitro
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