An integrated GaInP/Si dual-junction solar cell with enhanced efficiency using TOPCon technology
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An integrated GaInP/Si dual‑junction solar cell with enhanced efficiency using TOPCon technology Manish Verma1 · Guru Prasad Mishra1 Received: 9 June 2020 / Accepted: 22 July 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract The main focus here is to electrically connect lattice mismatched GaInP/Si sub-cells and enhance the overall cell performance of the designed dual-junction solar cell. This dual-junction solar cell is designed with carrier-selective tunnel oxide passivated contact (CS-TOPCon) technology. The lattice mismatch between the sub-cells is reduced by inserting buffer layer in the top cell. This buffer layer helps in better photogeneration and carrier transport and increases short-circuit current. The presence of electric field in the tunnel oxide region and linear behavior of the pinholes (micro-resistors) is extensively studied. GaInP and Si cells are individually simulated using Silvaco ATLAS TCAD simulation tool. The CS-TOPCon technology at the passivated bottom cell reduces the recombination and increases the external open-circuit voltage. The integrated GaInP/ Si dual-junction solar cell results in the efficiency of 28.14% and the application of CS-TOPCon technology enhances the efficiency up to 35.32% using ASTM-certified globally accepted AM1.5G spectrum. The obtained result of electrically connected DJSC design is compared with available experimental data. Keywords Dual-junction solar cell · CS-TOPCon solar cell · Tunnel oxide · Electric field · Pinholes · ATLAS
1 Introduction Since the discovery of Photovoltaic (PV) and photoelectric effect, solar radiation has become great source of Energy. The development of PV technology made solar cell (SC) capable enough to convert it into electrical energy. Silicon (Si)-based solar cell harvests energy from Sun radiation utilizing around 600–1200 nm range of solar spectrum with band gap of 1.12 eV. Plenty availability of Si on earth surface makes it a cheapest material. Si-based single-junction solar cell (SJSC) has predicted efficiencies of 25.8% [1] and 22.9% [2] using rear heterojunction strip contact in hybrid solar wafer, 20.6% [3] using monocrystalline Czochralski (Cz) Si wafer-based passivated emitter rear contact (PERC) SC and 22.8% [4], and 19.6% using multicrystalline (mc) Si solar cell and n-type mc solar cell with 21.9% [5]. As the demand of solar energy is increasing, high efficiency solar cells are the need of time. Currently PV solar * Guru Prasad Mishra [email protected] 1
Department of Electronics and Communication Engineering, National Institute of Technology Raipur, G.E. Road, Raipur, Chhattisgarh 492010, India
industry is dominated by single junction based on silicon material, because of its low cost and availability. The best reported efficiency of Si SC using Tunnel Oxide Passivated Contact (TOPCon) and/or carrier-selective (CS) contact technology ranges from 21.12 to 24.9% [6–9]. Passivated and carrier-selective contact can achieve efficiency more than 26% with surface recombination [10–1
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