Application Fields of SEM/SPM Hybridsystems: Nanoscopic EBIC and Near Field CL
- PDF / 1,207,603 Bytes
- 8 Pages / 612 x 792 pts (letter) Page_size
- 55 Downloads / 135 Views
G2.2.1
Application Fields of SEM/SPM Hybridsystems: Nanoscopic EBIC and Near Field CL Ralf Heiderhoff, Ingo Joachimsthaler, and Ludwig J. Balk Lehrstuhl fuer Elektronik, Fachbereich Elektrotechnik & Informationstecnik, Bergische Universitaet Wuppertal, Fuhlrottstr. 10, 42097 Wuppertal, Germany ABSTRACT SPM/SEM-hybridsystems are more than only a combination of complementary microscopy techniques, because the used probes can simultaneously either be used as sensors, which give access to a vast variety of material properties, or as actuators, which can deliberately modify samples properties. The wide application field as well as flexibility is demonstrated exemplarily on techniques in microanalyses like nano-probing, cathodoluminescence, electron beam induced currents, and thermal analyses. These results provide an interesting perspective with respect to failure analyses and reliability of modern materials and devices. INTRODUCTION Besides optical inspection scanning electron microscopy (SEM) is the most common instrument in failure analyses and reliability of modern electronic devices, because in addition to the detection of surface morphologies with high depth-of-field a lot of further interactions (EDX, cathodoluminescence, Auger spectroscopy, etc.) are detectable which extend this instrument to a very versatile characterization tool in quantitative material analyses. But for many applications the lateral resolution is limited by the electron beam diameter, the energy dissipation volume, and the diffusion length of the minority carriers, thus constraining its resolving power for bulk specimen. Therefore new techniques are needed to overcome these problems, because the recognition of defects and their subsequent characterization has to be carried out with highest resolution to ensure that even smallest structures with modified material properties can be evaluated. This is a trivial need due to the fact that the critical dimensions in integrated circuits are getting smaller and smaller so that oncoming generations of ULSI devices will rely on device structures in a range which is aiming towards the lower nanometer regime. Scanning probe microscopes (SPM) already allow a topographic evaluation of semiconductors with atomic resolution. However, implementation of additional tip-specimeninteraction-mechanisms permits to extend the mere topological imaging systems to nanocharacterization tools. But these techniques have also their limitations due to the probe geometry etc. and a simple switching from a macroscopic field of view for orientation to a nanoscopic scan area for evaluation is not possible, yet. In addition, many near-field phenomena are still not understood and theories are missing for a lot of applications, because these techniques are relatively new. Therefore only a minor number of quantitative techniques are available in comparison to electron microscopy techniques. It has been already discussed that complementary analyses with SEM and SPM would bring a number of advantages especially for the accurate analy
Data Loading...
