Atomic layer deposition for nonconventional nanomaterials and their applications
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ATOMIC LAYER DEPOSITION FOR EMERGING THIN-FILM MATERIALS AND APPLICATIONS
Atomic layer deposition for nonconventional nanomaterials and their applications Taewook Nam1
Hyungjun Kim1,a)
1
School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea Address all correspondence to this author. e-mail: [email protected] This paper has been selected as an Invited Feature Paper. a)
Received: 1 September 2019; accepted: 7 October 2019
Amorphous carbon, germanium oxide, and 2-dimensional transition metal dichalcogenides grown by atomic layer deposition (ALD) are considered as promising materials for advanced nanoscale device fabrication processes and electronic devices, owing to their extraordinary characteristics. Deposition of these materials using ALD can overcome the limitations of current deposition techniques, including poor step coverage and wafer-scale uniformity, and uncontrollable stoichiometry. Despite these advantages, there has been a lack of research into these materials due to the absence of suitable precursors or optimized processes. In this review, we focus on these nonconventional materials, which have rarely been studied using ALD. The latest research progress and future outlook on these materials grown by ALD will be highlighted, with a particular focus on the applications of future nanoscale device fabrication processes and new concepts in device fabrication which could lead to a paradigm shift in electronics.
Introduction Ever since the introduction of atomic layer epitaxy by Suntola [1], numerous research on atomic layer deposition (ALD) have been conducted for a wide range of applications, including semiconductor applications in display, catalysis, functional coating, and medical and pharmaceutical applications [2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12]. ALD is a self-limiting thin film deposition method based on surface-saturated reactions between chemical species, and it possesses a number of advantages when compared with other deposition methods (e.g., sputtering and CVD). These advantages are, for instance, the controllability of atomic-level thickness, excellent conformality, and large-area uniformity [6]. Although, owing to these advantages, ALD has become an indispensable technique for the fabrication of nanoscale devices, it was not in the spotlight when it was introduced due to low productivity. When scaling down of devices and thin film deposition of sub-nanometer thickness on a high-aspect-ratio substrate or 3D complex structure with excellent conformality were required, ALD became the main deposition technique for the fabrication of nanoscale devices. At the same time, many research groups tried to overcome the issue of low productivity by changing from a conventional temporal to a spatial ALD process [13].
ª Materials Research Society 2019
Owing to these numerous efforts, ALD has become one of the important deposition techniques in many industries. From the recently published bibliometric analysis on ALD process, it can be seen that
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