Atomic layer deposition ZnO film as seed layer for hydrothermal growth of ZnO nanorods
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1258-Q11-10
Atomic layer deposition ZnO film as seed layer for hydrothermal growth of ZnO nanorods X. L. Li, C. W. Cheng, H. J. Fan Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore ABSTRACT Atomic layer deposition (ALD) ZnO film as seed layer for growing aligned ZnO nanorods arrays is demonstrated. The effects of the deposition temperature and film thickness to the morphology of the ZnO nanorods are studied. The ALD is found to have its advantage over the conventional dip-coating method when being applied to three-dimensional (3D) substrates, as exemplified by the macroporous Si adn CNT arrays. As one example, the CNTZnO 3D hybrid nanostructures are obtained which might be useful for energy-related applications. INTRODUCTION ZnO is a well-known wide band gap semiconductor and has been studied for many years [1, 2]. Its application has been expanding rapidly in recent years due to its unique electrical and optical properties. Since the first report on ultraviolet lasing from ZnO nanorods (NRs) [3], remarkable effort has been dedicated to the development of novel synthesis routes for 1D ZnO nanostructures. Ordered arrays of one-dimensional (1D) ZnO NRs have a promising future as applications in electronic and optoelectronic devices, because they are expected to improve the performance of various nanodevices such as short-wavelength lasers [3], nanostructured solar cells [4], light emitting diodes [5] and field-emission devices [6]. And recently, many efforts are put on the integration of 1D nanoscale building blocks in to 3D architectures [7]. Primary routes for ZnO NR synthesis include vapor-liquid-solid growth and metalorganic chemical vapor deposition (MOCVD) at relatively high temperatures (400~800 °C) [8, 9]. Another dominating synthesis strategy of ZnO NRs is the solution-based hydrothermal method [10]. This method is appealing because it proceeds at low processing temperature (
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