Characteristics of direct-patternable SnO 2 :Pt nanocomposite thin films fabricated by photochemical metal-organic depos

  • PDF / 443,952 Bytes
  • 7 Pages / 584.957 x 782.986 pts Page_size
  • 108 Downloads / 218 Views

DOWNLOAD

REPORT


We evaluated the optical and electrical characteristics of SnO2 hybrid films with various contents (0, 0.05, 0.1, 0.15, and 0.2 at.%) of Pt nanoparticles. The Pt nanoparticles were synthesized by a methanol reduction method, and their size was restricted to an average of 3 nm using poly(N-vinyl-2-pyrrolidone) as a protecting agent. An enhancement in electrical properties was observed due to the addition of Pt nanoparticles; the lowest resistivity (1.36  102 Xcm) and the highest figure of merit (1.18  104 X1) were obtained with SnO2 film containing 0.15 at.% Pt nanoparticles after annealing at 600 °C, and the average transmittance in the visible region was 86.61%. Well-defined 30-lm-wide direct-patterned SnO2 films containing Pt nanoparticles were formed by photochemical metal-organic deposition through a simple process including a photosensitive starting precursor, ultraviolet exposure, and removal of the unexposed area with solvent rinsing.

I. INTRODUCTION

There have been a number of applications of transparent conducting oxides (TCOs) within the fields of electrical devices, displays, and solar cell fabrication reported in recent years.1,2 TCOs generally require high optical transmittance and electrical conductivity for use in commercial applications. Therefore, indium tin oxide (ITO) is typically used for TCO applications due to its excellent transmittance and electrical conductivity.3 However, the use of ITO introduces problems such as high cost due to the rarity of indium, expensive deposition techniques, environmental pollution, and the instability of indium in hydrogen plasma.4,5 Because of these disadvantages, tin dioxide (SnO2) and zinc oxide (ZnO) have been actively explored as promising alternative materials to ITO. In particular, SnO2, which is an n-type, wide band-gap semiconductor (Eg 5 3.6–3.97 eV), has attracted attention for applications involving transparent electrodes, solar cells, and gas sensors because it is nontoxic, inexpensive, highly abundant, and stable in hydrogen plasma relative to ITO.3,6,7 However, because of the low conductivity of SnO2 compared to ITO, doping and hybridization with metallic nanoparticles have also been investigated.8 Metallic nanoparticles hold promise for use in advanced materials with new electronic, magnetic, optic, and thermal properties.9–11 In particular, platinum (Pt) nanoparticles have been widely used in the electronics industry for the manufacture of conductive thick film circuits and internal electrodes in multilayer ceramic capacitors. Furthermore, it a)

Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/jmr.2011.315 2860

J. Mater. Res., Vol. 26, No. 22, Nov 28, 2011

http://journals.cambridge.org

Downloaded: 03 Apr 2015

has been reported that the incorporation of nanoparticles imparts unique electrical and optical properties to composite materials compared with pristine matrix materials.12,13 There have been many reports of the formation of Pt-doped SnO2 thin films using chemical vapor deposition (CVD),14,15 sputtering