Characterization of 4H-SiC Jfets for use in Analog Amplifiers Capable of 723K Operation
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silicon-based electronics utilize Complementary Metal Oxide Semiconductor (CMOS) logic, Junction Field Effect Transistors (JFETs) have advantages over MOS devices in high-temperature, high-radiation, and even high-power applications in that they do not depend on a gate dielectric such as Si0 2 which often degrades in the aforementioned environments. Here, device performance of 4H-SiC JFETs from 294 K to 723 K and limited packaging issues are examined. TABLE I: Key Electronic Properties of Si, 4H-SiC, and GaAs Property
Eg (eV) EK (W/cm-K) Ecrit (MV/cm) Vsat (e-) (x 10
6
cm/s)
2
/.Ln (cm /V-s)
ni
3
(cm- )at300K
Silicon [3]
4H-SiC [3]
GaAs [4]
Comments
1.16 1.5 0.25
3.26
1.5
3.7
0.5
T
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