Contact hole shrink and multiplication by directed self-assembly of block copolymers: from material to integration
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Contact hole shrink and multiplication by directed self-assembly of block copolymers: from material to integration Raluca Tiron1, Xavier Chevalier2, Ahmed Gharbi1, Maxime Argoud1, Patricia Pimenta-Barros1, Mireille Maret3, Patrice Gergaud1, Tanguy Terlier1, Jean-Paul Barnes1, Christophe Navarro2, Guillaume Fleury4, Georges Hadziioannou4 1 LETI, Grenoble, France. 2 ARKEMA, Lacq, France. 3 SIMAP, CNRS Grenoble, France 4 ENSCPB, Bordeaux, France. ABSTRACT Density multiplication of patterned templates by directed self-assembly (DSA) of block copolymers (BCP) stands out as a promising alternative to overcome the limitation of conventional lithography. Using the 300mm pilot line available in LETI and Arkema’s materials, the main objective is to integrate DSA directly into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. Thus we investigate the potential of DSA to address contact and via level patterning by performing either CD shrink or contact multiplication. Our approach is based on the graphoepitaxy of PS-b-PMMA block copolymers. Lithographic performances of block copolymers are evaluated both for contact shrink and contact doubling. Furthermore, advanced characterization technics are used to monitor in-film self-assembly process. These results show that DSA has a high potential to be integrated directly into the conventional CMOS lithography process in order to achieve high resolution contact holes. INTRODUCTION The ongoing progress in nanoscience and nanotechnology leads to a continual device miniaturization. Until now, lithography has been the main driving force of this process. Chemically amplified photo resists (CAR) are used in manufacturing processes for conventional 193nm immersion lithography applications. However, CARs may not be extendable as the dimensions of the features shrink to 20nm and below. The main obstacles to improve resolution remain the inherent limitations of optical lithography and the high cost of lithographic production tools. At the same time, the use of 193nm and EUV photolithography recently presented a key problem: the line edge roughness (LER). This line edge roughness is transferred into the substrate during the etching process and impacts the device performance. It is therefore important to evaluate new technological approaches to achieve high resolution features and low LER for microelectronic applications. Block copolymers have become of great interest for high-resolution patterning due to their low fabrication cost, ease of use and high throughput potential. Self-assembling materials used in conjunction with the most advanced exposure tools may enable extending the current manufacturing practices to dimensions of 10nm and less. Moreover, the LER of the self-
Downloaded from https://www.cambridge.org/core. Columbia University Libraries, on 15 Aug 2017 at 11:10:02, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms. https://doi.org/10.1557/opl.2015.249
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