Domain structures and magnetoelectric effects in multiferroic nanostructures
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Functional Oxides Prospective Article
Domain structures and magnetoelectric effects in multiferroic nanostructures Deyang Chen, and Xingsen Gao, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China Jun-Ming Liu, Laboratory of Solid State Microstructures, Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China Address all correspondence to Xingsen Gao, Jun-Ming Liu at [email protected]; [email protected] (Received 31 May 2016; accepted 29 August 2016)
Abstract Multiferroic nanostructures have been attracting tremendous attention not only for novel phenomena associated with fundamental physics, but also due to exciting application potentials in future nanoelectronic devices. In this mini-review, we first introduce several fabrication techniques recently developed for single phase and composite multiferroic nanostructures. Then, the topologic vortex domain structures in various ferroic nanostructures, which may bring about additional fundamental discoveries and applications in ultrahigh density recording, are discussed. Particular attention is paid to magnetoelectric effects in multiferroic nanodots, including room temperature electric field induced magnetic domain switching. Finally, existing challenges and new directions, e.g., cross-couplings among multiple functionalities, are prospected. We genuinely hope that this mini-review will arouse the readers’ interest in this fascinating field.
Introduction Since 2003, the renaissance of multiferroics has been stimulated by several seminal works, including the discoveries of magnetoelectric (ME) responses in single-phase multiferroic BiFeO3 (BFO) thin films,[1] magnetism-induced ferroelectricity in multiferroic manganites such as TbMnO3,[2] and strong ME coupling in CoFe2O4 (CFO)/BaTiO3 (BTO) multiferroic heterostructures,[3] unexpectedly igniting the tremendous flurry of interests in this field. The multiferroic nanostructures are of particular significance due to the high demand of the current miniaturization and multifunctional technological trends in microelectronic industry. In addition, the strong coupling between charge and spin degrees of freedom, i.e., the ME coupling in multiferroic nanostructures, allows for controlling magnetic order by electric field and vice versa.[4–7] Over the last decade, this field has been expanding rapidly, and a number of novel phenomena and promising application opportunities have been reported.[8–12] Nowadays, device scale-down is being accelerated with the demands of high-performance and high-density data storage, while emergent physical phenomena can be expected when the materials are scaled down to nanoscale. Along this line, much attention has been attracted to developing new fabrication processes for high-density and high-quality multiferroic nanostructures, either single-phase materials or ferromagnetic/ferroelectric composites.[13,14] In ferroic nanodots, in contrast to the popul
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