E-MRS Announces Nominees for Board of Delegates

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E-MRS Announces Nominees for Board of Delegates The European Materials Research Society has announced a slate of nominees to be Group I members of the E-MRS Board of Delegates. According to E-MRS legal statutes, the Board of Delegates is composed of two types of representatives: (I) a maximum of 50 elected members, and (II)—to achieve an equilibrium representation among fields of activity and European nations—10 supplementary members proposed by the Executive Committee and subsequently approved by the Board of Delegates. Ballots are still available from E-MRS President P. Siffert at the address on p. 2 in this issue. Group I nominees include: Dr. M. von Allmen, Cendres Metaux S.A., Biel, Switzerland (metallurgy) Prof. Dr. C.A.J. Ammerlaan, Natuurkundig Laboratorium, Universiteit, Amsterdam, Netherlands (properties of semiconductors) Prof. Dr. M. Balkanski, Laboratoire de Physique des Solides, Universite Pierre et Marie Curie, Paris, France (spectroscopy of solids, atomic motion of solids) Prof. Dr. A. Barbedo de Magalhaes, Departamento de Engenharia Mecanica, Universidade, Porto, Portugal (cast iron metallurgy, composites) Prof. Dr. G. Battaglin, Dipartimento di Chimica Fisica, Universita, Venezia, Italy (characterization of materials) Prof. Dr. G.G. Bentini, Istituto LAMEL, Consiglio Nazionale delle Ricerche, Bologna, Italy (characterization of materials) Dr. P.F. Bongers, Philips Research Laboratories, Philips, Eindhoven, Netherlands (chemistry of solids) Dr. I.W. Boyd, Department of Electronic and Electrical Engineering, University College, London, United Kingdom (laser processing of semiconducting materials) Prof. Dr. S.U. Campisano, Dipartimento di Fisica, Universita, Catania, Italy (beam interactions with materials) Prof. Dr. G.A. Chadwick, Hi-Tec Metals R&D Ltd. and Engineering Materials, University, Southampton, United Kingdom (metallurgy and materials sciences) Dr. G. Crean, National Microelectronics Research Centre, University College, Cork, Ireland (semiconducting materials and measurement sciences) Dr. A.G. Cullis, Royal Signals and Radar Establishment, Malvern, United Kingdom (beam processing of materials and electron microscopy) Prof. Dr. I. Eisele, Fakultat fur Elektrotechnik, Universitat der Bundeswehr Munchen, Neubiberg, West Germany (molecular beam epitaxy) Dr. E. Fogarassy, Centre de Recherches Nucleaires, PHASE, Strasbourg, France

MRS BULLETIN/FEBRUARY 1989

(photochemistry) Prof. Dr. C. Fotakis, Research Center of Crete, Foundation for Research and Technology - Hellas, Heraklio, Crete, Greece (photo-assisted processing of materials) Prof. Dr. H. Fredriksson, Department of Casting of Metals, The Royal Institute of Technology, Stockholm, Sweden (casting of metals) Dipl. Phys. P. Glasow, Deputy Director, Forschungslaboratorien, Siemens AG, Erlangen, West Germany (sensors, hightemperature electronic devices) Dr. A. Golanski, Centre National d'Etudes des Telecommunications, Grenoble, France (beam processing of semiconductors) Dr. F. Greuter, Corporate Research, Asea Brown Boveri, Baden-Dattwil, Swi