Electroceramic Thin Films Part II: Device Applications
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Ferroelectric thin films have experienced tremendous development in recent years due to the advent of sophisticated film-synthesis techniques and an increase in the understanding of the related materials science and integration of films into various novel devices. Major advances in ferroelectric thin-film synthesis and characterization were addressed last month in the June MRS Bulletin. This volume is dedicated to selective device issues and applications. Ferroelectric materials can be used to fabricate capacitors for integration into
Orlando Auciello, Guest Editor for this issue of MRS Bulletin, is a member of the scientific staff of the Microelectronics Center of North Carolina and an adjunct professor in the Department of Materials Science at North Carolina State University (NCSU). He is also a research associate of Argonne National Laboratory. He earned his MS and PhD degrees in physics from the Physics Institute "Dr. Balseiro" (National University of Cuyo and Atomic Energy Commission, Argentina). He has extensive expertise on different subjects including ion-beam,
MRS BULLETIN/JULY 1996
nonvolatile ferroelectric random-access memories (NVFRAMs) and as high dielectric layers for capacitors with high capacitance for manufacturing planar dynamic random-access memories (DRAMs). Ceramic conductors can be applied to ohmic, voltage-dependent, and thermally sensitive resistors; fast-ion conductors; and humidity and gas sensors. Piezoelectricity is being exploited in micromachines such as accelerometers, displacement transducers, and actuators such as those required for inkjet printers, for video-recording head positioning,
laser-beam, and plasma interaction with surfaces and their application to processing of materials for microelectronics, and development of ion-beam, laser-beam, and plasma systems for . deposition of thin films. Work performed by Auciello's and A.I. Kingon's NCSU group has resulted in the development of materials-integration strategies to fabricate PZT-based capacitors suitable for nonvolatile ferroelectric memories as are currently being explored by many memory manufacturers around the world. Auciello is a member of several scientific societies and has
Orlando Auciello about 200 publications to his name, including many review articles and book chapters. He has edited six books on ion-beam and plasma interaction with materials and film processing, and is currently a coeditor of the book series,
and for micromachining. Pyroelectricity can be utilized in the fabrication of highsensitivity room-temperature infrared detectors while electro-optic activity can be used in color-filter devices, displays, image-storage systems, and optical switches for integrated optical systems. These applications of electroceramic thin films are only part of a more extensive list. Issues relevant to NVFRAMs based on strontium-bismuth-tantalate are discussed in the first article. The important issues of degradation of ferroelectric layers and consequently capacitors used for nonvolatile memories are discussed in the s
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