Electron Beam Induced Tailoring of Electrical Characteristics of Organic Semiconductor Films
- PDF / 2,013,867 Bytes
- 22 Pages / 595.276 x 790.866 pts Page_size
- 79 Downloads / 176 Views
REVIEW
Electron Beam Induced Tailoring of Electrical Characteristics of Organic Semiconductor Films Nishant Chaudhary1 · Ajay Singh2 · D. K. Aswal2,3 · Archana Sharma1 Received: 26 April 2020 / Accepted: 27 July 2020 © The Tunisian Chemical Society and Springer Nature Switzerland AG 2020
Abstract Tailoring the characteristics of organic semiconductors including molecular semiconductor and conducting polymers is the frontline area of research for improving the performance of organic electronic devices. Electron beam treatment has been established as one of the easiest method in comparison to others like chemical doping, thermal processing, ozonolysis, UV and other ionizing radiation treatment, to tune the physico-chemical properties of organic semiconductors. High energy electron beam (EB) generated from an accelerators impinges energy to the material and causes several phenomena including doping, crosslinking, chain degradation, gas evolution, molecular structural modifications, oxidation and unsaturation. Such modifications lead to variation in electrical characteristics and consequently affect the overall device performances. In the present review we have focused on the different interaction processes of EB with organic semiconductors and its implications to tailor the performance of device comprising of it mainly gas sensors, field effect transistors, thermoelectric power generators and radiation dosimeters. Graphic abstract
Electron Beam Accelerator Electron beam irradiation
h+
Electron beam irradiation
e e- eee- e- e-
h+ + h+ h h + h+ h+
Improved Electrical Characteristics & Device Performance
Keywords Electron beam · Molecular semiconductor · Conducting polymer · Doping · Cross-linking · Scissioning · Radiation dosimeters · Gas sensors · Thermoelectric power generators
1 Introduction * Nishant Chaudhary [email protected] 1
Accelerator and Pulse Power Division, Bhabha Atomic Research Centre, Mumbai 400 085, India
2
Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India
3
CSIR-National Physical Laboratory, New Delhi 110 011, India
The high energy electron beam (EB) has become a powerful and important tool to modify the physico-chemical characteristics of both the categories of organic semiconductors namely molecular semiconductor and conducting polymer. The amount of radiant energy absorbed per unit mass of the material, is known as radiation dose (D), which is measured in joules per kg and its unit is gray (Gy) [1, 2]. EB processing is a type of radiation treatment in which an accelerator
13
Vol.:(0123456789)
Chemistry Africa
is used to generate high energy electron beam and this EB is made to fall on the material of interest for their modifications. The accelerators are fully controlled systems, and therefore the technique is a well safe process in comparison to other ionizing radiation treatments like gamma irradiations, using radio isotopes [3]. The overall results due to interactions of gamma or EB with materials are similar but still t
Data Loading...
