Enhanced Magnetoelectric Effects in Self-Assembled Hemispherical Close-Packed CoFe 2 O 3 -Pb(Zr 0.52 Ti 0.48 )O 3 Thin F
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https://doi.org/10.1007/s11664-020-08500-4 Ó 2020 The Minerals, Metals & Materials Society
ASIAN CONSORTIUM ACCMS–INTERNATIONAL CONFERENCE ICMG 2020
Enhanced Magnetoelectric Effects in Self-Assembled Hemispherical Close-Packed CoFe2O3-Pb(Zr0.52Ti0.48)O3 Thin Film SRIDEVI MEENACHISUNDARAM,1,4 NAOKI WAKIYA,1,2,3 CHELLAMUTHU MUTHAMIZHCHELVAN,4,6,7 PARTHASARATHI GANGOPADHYAY,5 NAONORI SAKAMOTO,2,3 and SURUTTAIYUDAIYAR PONNUSAMY4 1.—Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432–8561, Japan. 2.—Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432–8561, Japan. 3.—Research Institute of Electronics, Shizuoka University, Hamamatsu 432–8561, Japan. 4.—Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Chennai 603–203, India. 5.—Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu 603–102, India. 6.—e-mail: [email protected]. 7.—e-mail: [email protected]
With their promising enhanced magnetoelectric (ME) effects and multifunctional properties, 2D ME materials are garnering considerable research interest. However, experimental studies regarding ME effects are sparse. In order to enhance ME properties, it may be important to develop a strategy to prepare ordered ME thin film materials on suitable substrates. Materials ought to possess high surface area and less area of contact with the substrate. We investigate ME thin films consisting of CoFe2O4 (CFO)/Pb(Zr0.52Ti0.48)O3 (PZT)/LaNiO3Æ(LNO) on a Pt/Ti/SiO2/Si substrate that were prepared using a radio-frequency magnetron sputtering technique. The method helps to relax the in-plane constraint force and enhances the coexistence of the ferromagnetic and ferroelectric phases at the interface of the materials. Interestingly, the freestanding hemispherical ME thin films exhibited huge changes in magnetic field-induced polarization. Compared with planar CFO/PZT thin films of similar dimensions, the measured polarization was more than twice as large in the freestanding hemispherical ME thin films. This facile physicochemical technique for preparing highly efficient, hierarchically ordered micro/nano-magnetoelectric thin films may be used for the fabrication of miniaturized devices. Key words: Freestanding thin films, ME effect, polarization, clamping force
INTRODUCTION Magnetoelectric (ME) composite thin films, due to their multifunctional properties and promising enhanced ME effects, have garnered ever-
(Received March 20, 2020; accepted September 19, 2020)
increasing interest over the past few decades.1,2 The coupling interaction between the ferromagnetic and ferroelectric layers is developed in this ME material. This ME coupling interaction has possible applications in multilevel recording memory3,4 and low-power-consumption magnetic memory devices.5,6 Thin films prepared under the same deposition conditions reveal improved properties just by changing the structure, and thus such thin
Meenachisundaram, Wakiya, Muthamizhchelvan, Gangopadhyay, Sakamoto, and Ponnusamy
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