European Networks Focus on Advanced Materials
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European Networks Focus on Advanced Materials The European Networks on Advanced Materials were established in 1987 to enhance scientific and technical cooperation between research teams from different countries. With the assistance of industrial and public institutions and with the support of the Council of Europe and the Commission of the European Communities, the European Materials Research Society is continuing to develop these networks. Eleven networks have established programs, and three are in the initial stages of development (see Table). This article is part of a continuing series that focuses on the philosophies, aims and activities of the separate networks as described by their chairmen. Featured this month is Network 6 on High Energy Implantation. A brochure detailing all the networks is available from: P. Siffert, Chairman, European Materials Research Society, Centre de Recherches Nucleaires, 23, rue de Loess, F67037, Strasbourg, France; telephone 88 28 65 43; fax 88 28 09 90.
Network 6—High Energy Ion Implantation Chairman: G.G. Bentini, CNR-Istituto LAMEL, Bologna, Italy. The network on ion beam processing in materials for electronics involves the contribution of a number of European laboratories which, in the past years, have been among the most active centers in ion implantation in semiconductors. In the recent past, ion beam processes have played an increasing role in the semiconductor industry and, from the early applications to the threshold adjustment of MOS devices, there has been an evolution toward the present situation in which ion implantation has become a wellestablished industrial technique. For many processes, the current trend is to substitute the traditional thermal diffusion steps with ion implantation, thanks to its capability for self-alignment with the mask and the possible reduction of the "thermal budget" in device manufacture. The primary technological importance of
such processes has already been explicitly established in the European Economic Community Workshop for "semiconductor manufacturing and testing equipment," held in Brussels, February 19,1986, where, in particular, the proposal for the development of advanced high-energy implantation equipment was recommended for the second phase of the ESPRIT program. For the above reasons, this European network on ion beam processing in materials for electronics has been formed with the aim of developing a research program, based on the requirements of the microelectronics industry and concerned with the strategic field of high-energy implantation. The need for a European network in this field is a result of the wide number of interdisciplinary activities necessary to develop the program. Also, the high-energy (highcurrent) implantation machines, now considered crucial for the development of microelectronics, are not available in any European country. Some machines suitable for such research will soon be operational outside Europe (in the United States), but they are "classified" and will not be sold during the next few years to E
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