European Networks Focus on Advanced Materials
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European Networks Focus on Advanced Materials The European Networks on Advanced Materials were established in 1987 to enhance scientific and technical coopération between research teams from différent countries. With the assistance of industrial and public institutions and with the support of the Council of Europe and the Commission of the European Communities, the European Materials Research Society is continuing to develop thèse networks. Eleven. networks hâve established programs, and three are in the initial stages of development (see Table). This article is part of a continuing séries that focuses on the philosophies, aims and activities of the separate networks as described by their chairmen. Featured this month is Network 9 on Gallium Arsenide. A brochure detailing ail the networks is available from: P. Siffert, Chairman, European Materials Research Society, Centré de Recherches Nucléaires, 23, rue de Loess, F67037, Strasbourg, France; téléphone 88 28 65 43; fax 88 28 09 90.
Network 9—Gallium Arsenide Chairmen: W. Wettling and H.S. Rupprecht, Frauenhofer Institut fur Angewandte, Freiburg, West Germany. With the steadily increasing demand for faster devices in information technology and data processing, new materials are being investigated which, based on their superior physical properties, allow opération of higher frequencies than devices based on silicon. The most promising of thèse materials are the Iïï-V semiconductors and among them the GaAs and GaAIAs Sys-
tem. In the near future operating frequencies of 50 to 100 GHz for analog devices are envisaged, corresponding to switching times of 10 to 5 picoseconds in a digital inverter stage. Work in this network's field of materials research aims at improving ail technologically important growth and déposition processes of GaAs active layers on semiinsulating substrates and of métal and dielectric fUms on GaAs. Spécial emphasis will be put on à better understanding of interfaces between GaAs and metals and dielectrics with the objective to develop advanced processing concepts for GaAs micrœlectronic and optoelectronic integrated circuits. Laboratories participating in this network include: IMEC, Leuven, Belgium; Université VII, Paris, France; UMIST, Manchester, United Kingdom; STC, Harlow, United Kingdom; Plessey, Caswell Towcester, United Kingdom; INSA de Lyon, Villeurbanne, France; University of Nottingham, United Kingdom; TH, Darmstadt, West Germany; ELAB, Trondheim, Netherlands; Thomson CSF, Massy, France; University, Paderborn, West Germany; Max-Planck-Institut, Stuttgart, West Germany; CNET, Bagneux, France; IAF-FHG, Freiburg, West Germany; Tech Universitat, Clausthal, West Germany; University, Strasbourg, France; RSRE, St. Malvern, United Kingdom; KFA, Jiilich, West Germany; IAF-FHG, Freiburg, West Germany; MASPEC 4, Parma, Italy; CNRS, Villeneuve, France. rj
E-MRS Networks on Advanced Materials Network Number
Thème
Group Leaders
1
Laser chemistry
I.W. Boyd (UK) E.F. Krimmel (FRG)
2
Solid state ionics
M. Balkanski (France)
3
Modeling of so
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