Fabrication of Copper-Indium-Disulfide Films onto Mo/Glass Substrates Using Pulsed Laser Deposition
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Fabrication of Copper-Indium-Disulfide Films onto Mo/Glass Substrates Using Pulsed Laser Deposition R. Mu, M.H. Wu, Y. C. Liu1, A. Ueda, D.O. Henderson, A.B. Hmelo2 L.C. Feldman2 and A. Hepp3 Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville TN 37208, USA 1 Open Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanism and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China. 2 Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA 3
NASA Glen Research Center, Cleveland, OH 44135, USA
ABSTRACT Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses. INTRODUCTION Photovoltaics (PV), as an alternative energy source, can be used for anything that requires electricity ranging from small and remote applications to central power stations. PVs have great economic and environmental benefits and are versatile as an energy source. Thin film photovoltaic devices offer several advantages over other solar cells. Among these benefits are possible lower cost, a large-scale application, few limitations of shapes and configurations, light weight, and high radiation resistance. These factors, in particular, the light weight and high radiation resistance make these materials attractive for space applications. Chalcopyrite semiconductors, such as CuInS2 and CuInxGa1-xSe2, are very promising materials as active layers for solar cells [1-7]. They not only have the optical band gap close to the peak of the solar energy spectrum, but also have a high absorption cross section above 104 cm-1. Thus, a 1 – 2 µm thick film is sufficient to absorb over 99% incident solar energy above the band gap [1]. It was reported recently that the conversion efficiency has reached up to 18.8% at the laboratory level for CuInxGa1-xSe2 at the National Renewable Energy Laboratory (NREL). On the other hand, the current achievable energy conversion efficiency is not limited by fundamental physics of particular materials. Rather, it is limited by fabrication techniques, film quality control, and tailoring of the optical band gap, carrier types and carrier concentration via control of the intrinsic stoichiometry of the film and phase compositions. Pulsed laser deposition (PLD) has been used successfully to grow many different types of low dimensional materials including high quality films and nanocrystals. It is highly compatible with other high vacuum techniques including MBE, sputtering, e-beam evaporation and so on. Single-crystal semiconductor epitaxial thin films can be fabricated via laser-MBE [2]. Superlattice and multil
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